HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 27

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

4. Read to Write Interval
4.1. Read to Write Interval
Semiconductor Group
(Burst Length = 4, CAS latency = 3)
CLK
DQMx
Command
DQ’s
T0
NOP
"H" or "L"
Read A
T1
Minimum delay between the Read and Write
Commands = 4 + 1 = 5 cycles
T2
NOP
T3
NOP
27
DOUT A0
t
T4
DQZ
NOP
Must be Hi-Z before
the Write Command
256 MBit Synchronous DRAM
T5
NOP
HYB 39S256400/800/160T
Write B
T6
DIN B0
Write latency
T7
DIN B1
NOP
t
DQW
1998-10-01
T8
DIN B2
NOP
of DQMx
SPT03787