HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 28

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

4.2. Minimum Read to Write Interval
4.3. Non-Minimum Read to Write Interval
Semiconductor Group
t
t
(Burst Length = 4, CAS latency = 2, 3)
CLK
DQM
Command
CAS
latency = 2
CAS
latency = 3
CK2
CK3
t
(Burst Length = 4, CAS latency = 2)
CLK
DQMx
Command
CAS
latency = 2
CK2
, DQ’s
, DQ’s
, DQ’s
NOP
T0
T0
NOP
"H" or "L"
"H" or "L"
Read A
Activate
T1
T1
Bank A
NOP
T2
T2
NOP
DOUT A0
NOP
t
T3
DQZ
T3
NOP
Must be Hi-Z before
the Write Command
28
DOUT A0
DOUT A1
Read A
t
Read A
T4
T4
DQZ
1 Clk Interval
Must be Hi-Z before
the Write Command
256 MBit Synchronous DRAM
NOP
Write A
T5
T5
DIN A0
HYB 39S256400/800/160T
Write latency t
t
DQW
Write B
DIN B0
DIN B0
T6
T6
DIN A1
NOP
DQW
NOP
DIN B1
DIN B1
T7
T7
DIN A2
NOP
of DQMx
1998-10-01
NOP
DIN B2
DIN B2
T8
T8
DIN A3
NOP
SPT03413
SPT03940