HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 29

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
5. Burst Write Operation
Semiconductor Group
(Burst Length = 4, CAS latency = 2, 3)
CLK
Command
DQ’s
The first data element and the Write
are registered on the same clock edge.
T0
NOP
Write A
T1
DIN A0
T2
DIN A1
NOP
T3
DIN A2
NOP
29
Extra data is ignored after
termination of a Burst.
T4
DIN A3
NOP
256 MBit Synchronous DRAM
T5
don’t care
NOP
HYB 39S256400/800/160T
T6
NOP
T7
NOP
1998-10-01
T8
NOP
SPT03790

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