HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 31

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
7. Burst Write and Read with Auto Precharge
7.1. Burst Write with Auto Precharge
7.2. Burst Read with Auto Precharge
Semiconductor Group
(Burst Length = 2, CAS latency = 2, 3)
CLK
Command
DQ’s
t
t
(Burst Length = 4, CAS latency = 2, 3)
CLK
Command
CAS
latency = 2
CAS
latency = 3
CK2
CK3
, DQ’s
, DQ’s
T0
Bank A
Active
T0
Read A
with AP
T1
NOP
T1
NOP
T2
NOP
T2
DOUT A0 DOUT A1 DOUT A2 DOUT A3
NOP
Auto Precharge
T3
DIN A0
Write A
T3
DOUT A0
NOP
31
T4
NOP
DIN A1
T4
DOUT A1
NOP
t
Begin Auto Precharge
Bank can be reactivated after
WR
Begin Auto Precharge
Bank can be reactivated after
256 MBit Synchronous DRAM
T5
NOP
T5
DOUT A2
NOP
HYB 39S256400/800/160T
t
t
RP
RP
T6
NOP
T6
DOUT A3
NOP
t
RP
t
T7
NOP
RP
t
RP
T7
NOP
T8
NOP
1998-10-01
T8
NOP
SPT03721
SPT03909

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