HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 50

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HYB39S256400T-10

Manufacturer Part Number
HYB39S256400T-10
Description
256 MBit Synchronous DRAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
19. Random Row Write (Interleaving Banks) with Precharge
19.1. CAS Latency = 2
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
t
CK2
RCD
Command
T1
Bank A
DAx0
Write
CAx
T2
DAx1
T3
DAx2 DAx3
T4
T5
DAx4
T6
DAx5 DAx6
Command
T7
Activate
Bank B
RBx
RBx
T8
DAx7
Command
T9 T10
Bank B
Write
DBx0
CBx
50
Precharge
Command
Bank A
t
DBx1
WR
T11
DBx2 DBx3
T12 T13
Command
Activate
Bank A
RAy
RAy
256 MBit Synchronous DRAM
t
RP
DBx4
T14
HYB 39S256400/800/160T
DBx5 DBx6
T15
T16
DBx7
T17 T18
Command
Burst Length = 8, CAS Latency = 2
Bank A
Write
DAy0 DAy1
CAy
Precharge
Command
Bank B
t
WR
T19
DAy2
T20 T21 T22
DAy3
1998-10-01
SPT03927
DAy4

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