HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 52

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

20. Full Page Read Cycle
20.1. CAS Latency = 2
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
Command
CK2
T1
Bank A
Read
CAx
T2
Command
Command
T3
Activate
Activate
Bank B
Bank B
RBx
RBx
Ax
T4
Ax
The burst counter wraps
page address back to zero
during this time interval.
from the highest order
+1 Ax+ 2 Ax
T5
T6
-
2 Ax 1
T7
-
Command
T8
Bank B
Read
Ax
CBx
T9
Full Page burst operation does not
bursting beginning with the starting address.
terminate when the burst length is satisfied;
the burst counter increments and continues
Ax+
52
1
T10
Bx
T11
Bx+1 Bx+2
T12
256 MBit Synchronous DRAM
T13
Bx 3
+
T14
HYB 39S256400/800/160T
+ Bx 4
Burst Stop
Command
T15
Bx+
Burst Length = Full Page, CAS Latency = 2
T16 T17 T18 T19 T20 T21 T22
5
Bx
Precharge
Command
Bank B
6 +
t
RP
Command
Activate
Bank B
RBy
RBy
1998-10-01
SPT03929