HYB39S256400T-10 SIEMENS [Siemens Semiconductor Group], HYB39S256400T-10 Datasheet - Page 53

• Manufacturer Part Number: HYB39S256400T-10
• Description: 256 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

20.2. CAS Latency = 3
Semiconductor Group
CLK
CKE
CS
RAS
CAS
WE
BS
AP
Addr.
DQM
DQ
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0
t
CK3
T1
Command
T2
Bank A
Read
CAx
T3
Command
Command
T4
Activate
Activate
Bank B
Bank B
RBx
RBx
T5
Ax
T6
Ax 1 +
The burst counter wraps
from the highest order
page address back to zero
during this time interval.
T7
Ax+ Ax-
2
T8
2
Command
T9
Bank B
Read
Ax
CBx
1 -
53
T10
Ax
T11
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address.
Ax
1 + Bx
T12
256 MBit Synchronous DRAM
T13
Bx 1 +
T14
HYB 39S256400/800/160T
Bx
Burst Stop
Command
+2 Bx
T15 T16
+
Burst Length = Full Page, CAS Latency = 3
3
Bx
Precharge
Command
Bank B
4 +
T17
Bx
5 +
t
T18 T19
RRD
Command
Activate
Bank B
RBy
RBy
T20
1998-10-01
T21 T22
SPT03930