M58BW016BB100T3T STMICROELECTRONICS [STMicroelectronics], M58BW016BB100T3T Datasheet - Page 41

• Manufacturer Part Number: M58BW016BB100T3T
• Description: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Figure 16. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: Valid Data Ready = Valid Low during valid clock edge
Figure 17. Synchronous Burst Read - Burst Address Advance
K
ADD
L
ADD
G
B
1. V= Valid output.
2. R is an open drain output with an internal pull up resistor of 1M
300k
available on the next valid clock edge.
K
Output
R
(1)
for a single memory on the R bus, should be used to give the data valid set up time required to recognize that valid data is
VALID
V
V
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
tGLQV
V
tRLKH
tBLKH
The internal timing of R follows DQ. An external resistor, typically
Q0
(2)
V
Q1
tBHKH
V
Q2
AI03649
AI03650
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