M58BW016DB70T3FF STMICROELECTRONICS [STMicroelectronics], M58BW016DB70T3FF Datasheet - Page 30

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M58BW016DB70T3FF

Manufacturer Part Number
M58BW016DB70T3FF
Description
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Command interface
4.6
4.7
30/69
Block Erase command
The Block Erase command can be used to erase a block. It sets all of the bits in the block to
‘1’. All previous data in the block is lost. If the block is protected then the erase operation will
abort, the data in the block will not be changed and the Status Register will output the error.
Two Bus Write operations are required to issue the command; the first write cycle sets up
the Block Erase command, the second write cycle confirms the Block Erase command and
latches the block address in the Program/Erase controller and starts it. The sequence is
aborted if the Confirm command is not given and the device will output the Status Register
Data with bits 4 and 5 set to '1'.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Erase operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
The command can be executed using either V
fast erase operation). If V
erase operation will be executed, otherwise the operation will use V
the V
Register V
Typical Erase times are given in
See
suggested flowchart on using the Block Erase command.
Program command
The Program command is used to program the memory array. Two Bus Write operations are
required to issue the command; the first write cycle sets up the Program command, the
second write cycle latches the address and data to be programmed in the Program/Erase
controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any
address after the program set-up command has been given.
Once the command is issued subsequent Bus Read operations read the Status Register.
See the section on the Status Register for details on the definitions of the Status Register
bits. During the Program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
If Reset/Power-down, RP, falls to V
The command can be executed using either V
(for a fast program operation). If V
a fast program operation will be executed, otherwise the operation will use V
below the V
Status Register V
program operation is aborted, the memory block must be erased and reprogrammed.
See
a suggested flowchart on using the Program command.
Appendix B: Flowcharts on page
Appendix B:
PP
Lockout voltage, V
PP
PP
Status bit is set to ‘1’ and the command must be re-issued.
Lockout voltage, V
Flowcharts,
PP
Status bit is set to ‘1’. As data integrity cannot be guaranteed when the
PP
PPLK
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
is in the V
Figure 23: Block Erase flowchart and
, during a fast erase the operation aborts, the Status
Table
PPLK
PP
IL
is in the V
during programming the operation will be aborted.
58,
, during a fast program the operation aborts and the
PPH
10.
Figure 21: Program flowchart and
range when the command is issued then a fast
DD
DD
PPH
(for a normal erase operation) or V
(for a normal program operation) or V
range when the command is issued then
DD
pseudocode, for a
. If V
PP
pseudocode, for
DD
goes below
. If V
PP
PP
(for a
goes
PP

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