M58BW016DB70T3FF STMICROELECTRONICS [STMicroelectronics], M58BW016DB70T3FF Datasheet - Page 38

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M58BW016DB70T3FF

Manufacturer Part Number
M58BW016DB70T3FF
Description
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DC and AC parameters
7
38/69
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 13: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 13.
Figure 6.
1. V
Supply voltage (V
Input/output supply voltage (V
Ambient temperature (T
Load capacitance (C
Clock rise and fall times
Input rise and fall times
Input pulses voltages
Input and output timing ref. voltages
DD
= V
DDQ
Operating and AC measurement conditions
AC measurement input/output waveform
.
DD
)
L
)
A
V DDQIN
)
V DDQ
Parameter
0 V
DDQ
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
)
conditions. Designers should check that the
Grade 6
Grade 3
V DDQIN /2
Min
–40
–40
V DDQ /2
2.7
2.4
AI04153
0 to V
V
Value
DDQ
30
DDQ
/2
Max
125
V
3.6
90
4
4
DD
Units
°C
°C
pF
ns
ns
V
V
V
V

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