M58BW016DB70T3FF STMICROELECTRONICS [STMicroelectronics], M58BW016DB70T3FF Datasheet - Page 40

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M58BW016DB70T3FF

Manufacturer Part Number
M58BW016DB70T3FF
Description
16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DC and AC parameters
Table 15.
1. I
40/69
I
DDP-UP
Symbol
V
V
V
V
I
I
I
I
I
to the moment when the supply voltage has become stable and RP is brought to High.
I
I
I
I
V
V
I
DDB
V
V
DDP-UP
I
DD1
DD2
DD3
DD4
I
V
PPLK
PP1
PP2
PP3
PP4
I
PPH
DD
PP1
LKO
LO
PP
OH
LI
OL
IH
IH
IL
(1)
is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
Input Leakage current
Output Leakage current
Supply current (Random Read)
Supply current (Power-up)
Supply current (Burst Read)
Supply current (Standby)
Supply current (Auto Low-Power)
Supply current (Reset/Power-down)
Supply current (Program or Erase,
Set Lock bit, Erase Lock bit)
Supply current
(Erase/Program Suspend)
Program current (Read or Standby)
Program current (Read or Standby)
Program current (Power-down)
Program current (Program)
Program in progress
Program current (Erase) Erase in
progress
Input Low voltage
Input High voltage (for DQ lines)
Input High voltage (for input only
lines)
Output Low voltage
Output High voltage CMOS
Program voltage
(program or erase operations)
Program voltage
(program or erase operations)
V
program lockout)
V
program lockout)
DD
PP
DC characteristics
supply voltage (erase and
supply voltage (erase and
Parameter
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
E = V
E = V
E = V
E = RP = V
Program, Block Erase in progress
f
f
clock
clock
f
add
E = V
E = V
IL
IL
IL
0.2 V
= 6 MHz
= 40 MHz
= 56 MHz
, G = V
, G = V
, G = V
RP = V
RP = V
0 V
0 V≤ V
E = V
Test condition
IH
IH
I
OH
I
DD
V
V
V
V
OL
V
V
RP = V
PP
PP
PP
PP
PP
PP
V
IH
IH
IH
= –100 µA
±
= 100 µA
OUT
SS
,
,
,
DD
IN
SS
= V
= V
≥ V
≤ V
= V
= V
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016DT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
M58BW016FT/B
± 0.2 V,
≤ V
applies only to
± 0.2 V
± 0.2 V
≤V
PP1
PP1
PPH
PPH
PP1
PP1
IL
DDQ
DDQ
0.8V
0.8V
V
DDQ
–0.5
11.4
Min
2.7
DDQIN
DDQIN
–0.1
0.2V
V
DDQ
Max
± 30
± 30
12.6
11.4
150
150
200
200
± 5
3.6
0.1
3.6
2.2
±1
±5
20
25
20
30
30
40
60
60
60
30
40
20
20
DDQIN
+0.3
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V

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