M58BW016DB70T3FF STMICROELECTRONICS [STMicroelectronics], M58BW016DB70T3FF Datasheet - Page 54

• Manufacturer Part Number: M58BW016DB70T3FF
• Description: 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Part numbering
9
Note:
54/69
Part numbering
Table 24.
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the ST Sales Office nearest to you.
Example:
Device type
M58
Architecture
B = Burst mode
Operating voltage
W = V
Device function
016D = 16 Mbit (x 32), boot block, burst, 0.15 µm
016F = 16 Mbit (x 32), boot block, burst, 0.11 µm
Array matrix
T = Top boot
B = Bottom boot
Speed
70 = 70 ns
80 = 80 ns
Package
T = PQFP80
ZA = LBGA 10 × 12 mm
Temperature range
3 = Automotive grade certified
Version
F = Silicon version F
Option
T = Tape and reel packing
F = ECOPACK package, tape and reel packing
AEC Q001 & Q002 or equivalent.
DD
= 2.7 V to 3.6 V; V
Ordering information scheme
DDQ
(1)
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
, –40 to 125 °C
= V
DDQIN
= 2.4 to V
M58 BW016D
DD
T
80 T
3
F T