M58BW016DB7T3FF NUMONYX [Numonyx B.V], M58BW016DB7T3FF Datasheet - Page 28

• Manufacturer Part Number: M58BW016DB7T3FF
• Description: 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
• Manufacturer: NUMONYX [Numonyx B.V]

Command interface
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Command interface
All bus write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential bus write operations. The commands are
summarized in
descriptions below.
Read Memory Array command
The Read Memory Array command returns the memory to read mode. One bus write cycle
is required to issue the Read Memory Array command and return the memory to read mode.
Subsequent read operations will output the addressed memory array data. Once the
command is issued the memory remains in read mode until another command is issued.
From read mode bus read commands will access the memory array.
Read Electronic Signature command
The Read Electronic Signature command is used to read the manufacturer code, the device
code or the burst configuration register. One bus write cycle is required to issue the Read
Electronic Signature command. Once the command is issued subsequent bus read
operations, depending on the address specified, read the manufacturer code, the device
code or the burst configuration register until another command is issued; see
Asynchronous read electronic signature
Read Query command
The Read Query command is used to read data from the common Flash interface (CFI)
memory area. One bus write cycle is required to issue the Read Query command. Once the
command is issued subsequent bus read operations, depending on the address specified,
read from the common Flash interface memory area. See
interface
information contained in the common Flash interface (CFI) memory area.
(CFI),
Table 9:
Table
26,
Commands. Refer to
Table
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
27,
Table
operation.
28,
Table 29
Table 9
in conjunction with the text
and
Appendix A: Common Flash
Table 30
for details on the
Table 5: