M58BW032BB45T3T STMICROELECTRONICS [STMicroelectronics], M58BW032BB45T3T Datasheet - Page 27

• Manufacturer Part Number: M58BW032BB45T3T
• Description: 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 9. Read Electronic Signature
Note: 1. x= B or D version of the device.
Table 10. Program, Erase Times and Program Erase Endurance Cycles
Note: T
Full Chip Program
Double Word Program
512 Kbit Block Erase
256 Kbit Block Erase
64 Kbit Block Erase
Program Suspend Latency Time
Erase Suspend Latency Time
Program/Erase Cycles (per Block)
Configuration Register
Burst Configuration
Block Protection
2. BCR= Burst Configuration Register.
3. SBA is the start address of each block.
A
Manufacturer
= –40 to 125°C, V
Register
Device
Code
Parameters
DD
= 3.0V to 3.6V, V
M58BW032xB
M58BW032xT
M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB
Device
All
All
DDQ
= 1.6V to V
(1)
(1)
Min
DD
SBA+02h
A19-A0
00000h
00001h
00001h
00005h
M58BW032B/D
(3)
TBD
Typ
0.8
0.6
15
10
1
3
00000000h (Unprotected)
00000001h (Protected)
DQ31-DQ0
00000020h
00008838h
00008837h
100,000
BCR
Max
TBD
1.6
1.2
20
10
30
2
(2)
cycles
Unit
µs
µs
µs
s
s
s
s
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