M58BW032BB45T3T STMICROELECTRONICS [STMicroelectronics], M58BW032BB45T3T Datasheet - Page 59

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M58BW032BB45T3T

Manufacturer Part Number
M58BW032BB45T3T
Description
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
REVISION HISTORY
Table 25. Document Revision History
20-Oct-2003
21-Oct-2003
20-Nov-2003
27-Apr-2004
30-July-2004
05-Nov-2004
Date
Version
1.0
1.1
1.2
2.0
3.0
4.0
First Issue.
Figure 7, AC Measurement Load Circuit modified. I
Table 5, DC Characteristics.
Bit M3 no longer reserved, described in
text changes. Program and Erase Suspend Latency Times added to Table
10., Program, Erase Times and Program Erase Endurance
A19 added in
Table 6.Burst Configuration
DQ8-DQ15 and R signal names updated in
Description of
Burst Length Bit
X-Latency of 8 clock cycles added in
COMMAND INTERFACE
Electronic Signature
and Program
Clear Block Protection Configuration Register Command.
Erase All Main Blocks command added, Write to Buffer and Program, Set Burst
Configuration Register, Set and Clear Block Protection commands updated in
8.,
Standby Status removed from
Definition of bit 4 updated in
t
Clock Rising
Datasheet status changed to Preliminary Data.
QVKH
M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB
Commands.
removed from
Edge).
Command,
Figure 4.PQFP Connections (Top view through
Valid Data Ready
(M2-M0).paragraph updated in
Command,
Figure 13., Synchronous Burst Read (Data Valid from ’n’
Set Block Protection Configuration Register Command
section: Erase All Main Blocks command added,
Register, Note 1 updated.
STATUS REGISTER
Table 9., Read Electronic
Read Status Register
(R).signal updated.
Revision Details
Table 6., Burst Configuration Register
Burst Configuration Register
Table 1., Signal Names.
Burst Configuration Register
section.
DDB
Command,
test condition updated in
Signature.
updated.
Cycles.
package).
Write to Buffer
section. Minor
Table
Read
section.
Table
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and

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