M5M5W816WG RENESAS [Renesas Technology Corp], M5M5W816WG Datasheet
M5M5W816WG
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M5M5W816WG Summary of contents
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... The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp ...
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... The M5M5W816 is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5W816WG is packaged in a CSP (chip scale package), with the outline of 7.5mm x 8.5mm, ball matrix (48ball) and ball pitch of 0.75mm. ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI FUNCTION The M5M5W816WG is organized as 524288-words by 16-bit. These dev ices operate on a single +2.7~3.6V power supply , and are directly TTL compatible to both input and output. Its f ully static circuit needs no clocks and no ref resh, and makes it usef ul. ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI ABSOLUTE MAXIMUM RATINGS Symbol Parameter V cc Supply v oltage V Input v oltage I V Output v oltage O P Power dissipation d Operating T a temperature T Storage temperature stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter V High-lev el input v oltage IH V Low-lev el input v oltage IL V High-lev el output v oltage ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI AC ELECTRICAL CHARACTERISTICS (1) TEST CONDITIONS Supply v oltage Input pulse Input rise time and f all time Ref erence lev el Output loads (2) READ CYCLE Parameter Symbol t Read cy cle time CR t Address access time ( Chip select 1 access time ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI (4)TIMING DIAGRAMS Read cycle A 0~18 BC1#,BC2# (Note3) S1# (Note3) S2 (Note3) OE# (Note3 "H" lev el DQ 1~16 Write cycle ( W# control mode ) A 0~18 BC1#,BC2# (Note3) S1# (Note3) S2 (Note3) OE 1~16 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM ( (BC1) (BC2) ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI Write cycle (BC# control mode) A 0~18 BC1#,BC2# S1# (Note3) S2 (Note3) (Note5) W# (Note3) DQ 1~16 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S1# low, S2 high overlaps BC1# and/or BC2# low and W# low. Note 5: When the falling edge simultaneously or prior to the falling edge of BC1# and/or BC2# or the falling edge of S1# or rising edge of S2, the outputs are maintained in the high impedance state ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI Write cycle (S1# control mode) A 0~18 BC1#,BC2# (Note3) S1# S2 (Note3) W# (Note3) DQ 1~16 Write cycle (S2 control mode) A 0~18 BC1#,BC2# (Note3) S1# S2 (Note3) W# (Note3) DQ 1~16 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM (S1 (A) su (Note5) (Note4) t (D) su DATA IN STABLE ...
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... Ver. 6.0 M5M5W816WG - 55HI, 70HI, 85HI POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD) V Byte control input BC1# & I (BC) BC2# V Chip select input S1# I (S1) V Chip select input S2 I (S2) Power down Icc (PD) supply c urrent (2) TIMING REQUIREMENTS ...
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Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to ...