HM6-6617B883 INTERSIL [Intersil Corporation], HM6-6617B883 Datasheet

HM6-6617B883

Manufacturer Part Number

HM6-6617B883

Description

2K x 8 CMOS PROM

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HM6-6617B883.pdf (7 pages)

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March 1997

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• This Circuit is Processed in Accordance to MIL-STD-

• Low Power Standby and Operating Power

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns

• Industry Standard Pinout

• Single 5.0V Supply

• CMOS/TTL Compatible Inputs

• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads

• Synchronous Operation

• On-Chip Address Latches

• Separate Output Enable

• Operating Temperature Range . . . . . . -55

Ordering Information

Pinouts

SBDIP

SLIM SBDIP

CLCC

GND

883 and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 A

- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz

HM-6617/883 (SBDIP)

PACKAGE

TOP VIEW

A10

TEMPERATURE RANGE

-55

C to +125

Intersil Corporation 1999

14 15

C to +125

HM-6617/883 (CLCC)

16 17 18 19 20

TOP VIEW

6-250

32 31 30

HM1-6617B/883

HM6-6617B/883

HM4-6617B/883

HM-6617/883

Description

The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in

a 2K word by 8-bit/word format with “Three-State” outputs.

This PROM is available in the standard 0.600 inch wide 24

pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC

standard 32 pad CLCC.

The HM-6617/883 utilizes a synchronous design technique.

This includes on-chip address latches and a separate output

enable control which makes this device ideal for applications

utilizing recent generation microprocessors. This design

technique, combined with the Intersil advanced self-aligned

silicon gate CMOS process technology offers ultra-low

standby current. Low ICCSB is ideal for battery applications

or other systems with low power requirements.

The Intersil NiCr fuse link technology is utilized on this and

other Intersil CMOS PROMs. This gives the user a PROM

with permanent, stable storage characteristics over the full

industrial and military temperature voltage ranges. NiCr fuse

technology combined with the low power characteristics of

CMOS provides an excellent alternative to standard bipolar

PROMs or NMOS EPROMs.

All bits are manufactured storing a logical “0” and can be

selectively programmed for a logical “1” at any bit location.

90ns

A10

HM1-6617B/883

HM6-6617B/883

HM4-6617B/883

NOTE: P should be hardwired to V

A0-A10

P (Note)

120ns

except during programming.

2K x 8 CMOS PROM

PIN DESCRIPTION

No Connect

Address Inputs

Chip Enable

Data Output

Power (+5V)

Output Enable

Program Enable

DESCRIPTION

File Number

D24.6

D24.3

J32.A

PACKAGE NO.

3016.1

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HM6-6617B883 Summary of contents

Page 1

... © Intersil Corporation 1999 6-250 CMOS PROM 120ns PACKAGE NO. HM1-6617B/883 D24.6 HM6-6617B/883 D24.3 HM4-6617B/883 J32.A PIN DESCRIPTION PIN DESCRIPTION NC No Connect A0-A10 Address Inputs E Chip Enable Q Data Output V Power (+5V Output Enable ...

Page 2

Functional Diagram MSB A A10 A9 LATCHED 7 A8 ADDRESS A7 REGISTER LSB ALL LINES POSITIVE LOGIC: ACTIVE HIGH THREE-STATE BUFFERS: A HIGH OUTPUT ACTIVE ADDRESS LATCHES AND GATED DECODERS: LATCH ON ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Guaranteed and 100% Tested (NOTES PARAMETER SYMBOL CONDITIONS Read Cycle Time TELEL VCC = 4.5V and 5.5V NOTES: 1. All voltages referenced to Device GND measurements ...

Page 5

CONFORMANCE GROUPS Initial Test Interim Test PDA Final Test Group A Groups C & D Switching Waveforms VALID 1.5V ADDRESSES ADDRESS TAVEL 1.5V E TEHEL G DATA OUTPUT Q0-Q7 Test Circuit DUT C L (NOTE) NOTE: TEST HEAD CAPACITANCE HM-6617/883 ...

Page 6

Burn-In Circuits HM-6617/883 (.300 INCH) SBDIP VCC A10 ...

Page 7

Die Characteristics DIE DIMENSIONS: 140 x 232 x 19 1mils METALLIZATION: Type Å Å Thickness: 11k 15k Metallization Mask Layout All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality ...

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