28LV011RT2FI-20 MAXWELL [Maxwell Technologies], 28LV011RT2FI-20 Datasheet

no-image

28LV011RT2FI-20

Manufacturer Part Number
28LV011RT2FI-20
Description
3.3V 1 Megabit (128K x 8-Bit) EEPROM
Manufacturer
MAXWELL [Maxwell Technologies]
Datasheet
F
• 3.3V low voltage operation 128K x 8 Bit EEPROM
• R
• Total dose hardness:
• Excellent Single Event Effects:
• Package:
• Address Access Time:
• High endurance:
• Page write mode:
• Automatic programming
• Low power dissipation
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
EATURES
radiation
- > 100 krad (Si), depending upon space mission
- SEL
- SEU
- SEU saturated cross section = 3E-6 cm
- SEU
- SEU saturated cross section = 5E-3 cm
- 32 Pin R
- 32 Pin R
- JEDEC-approved byte-wide pinout
- 200, 250 ns Access times available
- 10,000 erase/write (in Page Mode), 10-year data
- 1 to 128 bytes
- 15 ms automatic page/byte write
- 20 mW/MHz active current (typ.)
- 72 µ W standby (maximum)
with hard errors
retention
AD
-P
TH
AK
TH
TH
® radiation-hardened against natural space
> 84 MeV/mg/cm
> 37 Mev/mg/cm
= 11.4 Mev/mg/cm
28LV011
AD
AD
-P
-P
:
AK
AK
® flat pack
® DIP
2
2
(read mode)
2
(write mode)
2
2
(read mode)
(write mode)
V
RES
RES
A16
V
OE
CE
WE
A0
A6
A7
CC
SS
05.28.02 Rev 2
Buffer and
Address
Latch
D
Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28LV011 is capable of in-system electrical Byte and Page pro-
grammability. It has a 128-Byte Page Programming function to
make its erase and write operations faster. It also features
Data Polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28LV011,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Meanwhile, software data protection is
implemented using the JEDEC-optional Standard algorithm.
The 28LV011 is designed for high reliability in the most
demanding space applications.
Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
Note:The recommended form of data protection during power
on/off is to hold the RES pin to V
down. This may be accompanied by connecting the RES pin
to the CPU reset line. Failure to provide adequate protection
during power on/off may result in lost or modified data.
Control Logic Timing
ESCRIPTION
High Voltage
Generator
3.3V 1 Megabit (128K x 8-Bit)
All data sheets are subject to change without notice
Logic Diagram
Y Decoder
X Decoder
:
AD
-P
AK
SS
® provides greater than 100
AD
during power up and power
I/O0
-P
Memory Array
I/O Buffer and
Input Latch
Data Latch
AK
©2002 Maxwell Technologies
Y Gating
28LV011
® packaging technol-
EEPROM
I/O7
All rights reserved.
RDY/Busy
1

Related parts for 28LV011RT2FI-20

28LV011RT2FI-20 Summary of contents

Page 1

... All data sheets are subject to change without notice 05.28.02 Rev 2 28LV011 EEPROM I/O0 I/O7 RDY/Busy I/O Buffer and Input Latch Y Gating Memory Array Data Latch : -P ® packaging technol ® provides greater than 100 AD AK during power up and power ...

Page 2

Megabit (128K x 8-Bit) EEPROM T ABLE 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 13-15, 17-21 T ABLE P ARAMETER Supply Voltage (Relative to Vss) Input Voltage (Relative to Vss) Operating Temperature Range Storage Temperature ...

Page 3

Megabit (128K x 8-Bit) EEPROM T 4. 28LV011 R ABLE P ARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. V min = -1.0 V for pulse width < min = 2.2 ...

Page 4

Megabit (128K x 8-Bit) EEPROM T 7. 28LV011 AC C ABLE (V = 3.3V ± 10 ARAMETER Functional Test Verify Truth Table Address Access Time -200 -250 Chip Enable Access ...

Page 5

Megabit (128K x 8-Bit) EEPROM T 8. 28LV011 AC E ABLE LECTRICAL (V = 3.3V ± 10 ARAMETER Address Setup Time -200 -250 Chip Enable to Write Setup Time (WE controlled) -200 -250 Write Pulse ...

Page 6

Megabit (128K x 8-Bit) EEPROM T 8. 28LV011 AC E ABLE (V = 3.3V ± 10 ARAMETER Byte Load Cycle -200 -250 Data Latch Time 2 -200 -250 Byte Load Window 2 -200 -250 Time ...

Page 7

Megabit (128K x 8-Bit) EEPROM IGURE EAD IMING AVEFORM All data sheets are subject to change without notice 05.28.02 Rev 2 28LV011 7 ©2002 Maxwell Technologies All rights reserved. ...

Page 8

Megabit (128K x 8-Bit) EEPROM IGURE YTE (1) (WE C RITE IMING AVEFORM All data sheets are subject to change without notice 05.28.02 Rev 2 28LV011 ) ONTROLLED 8 ©2002 Maxwell Technologies ...

Page 9

Megabit (128K x 8-Bit) EEPROM IGURE YTE (2) (CE C RITE IMING AVEFORM All data sheets are subject to change without notice 05.28.02 Rev 2 28LV011 ) ONTROLLED 9 ©2002 Maxwell Technologies ...

Page 10

Megabit (128K x 8-Bit) EEPROM IGURE AGE (1) (WE C RITE IMING AVEFORM All data sheets are subject to change without notice 05.28.02 Rev 2 28LV011 ) ONTROLLED 10 ©2002 Maxwell Technologies ...

Page 11

Megabit (128K x 8-Bit) EEPROM IGURE AGE IGURE OFTWARE (2) (CE C RITE IMING AVEFORM ATA ROTECTION IMING AVEFORM All data sheets are subject to ...

Page 12

Megabit (128K x 8-Bit) EEPROM IGURE OFTWARE ATA F IGURE (2) ( ROTECTION IMING AVEFORM ATA OLLING IMING AVEFORM All data sheets are subject to change ...

Page 13

Megabit (128K x 8-Bit) EEPROM F 10. SEU S IGURE 1.00E-02 1.00E-03 1.00E-04 1.00E-05 1.00E-06 1.00E- IGURE OGGLE IT AVEFORM ATURATED ROSS ECTION ALUES IN 28LV010 Read ...

Page 14

Megabit (128K x 8-Bit) EEPROM F 11. SEU S IGURE 1.00E-01 1.00E-02 1.00E-03 1.00E-04 1.00E-05 1.00E- EEPROM A N PPLICATION OTES This application note describes the programming procedures for the EEPROM modules and with details of ...

Page 15

Megabit (128K x 8-Bit) EEPROM RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V the RDY/Busy ...

Page 16

Megabit (128K x 8-Bit) EEPROM When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to CC programming mode by mistake. To prevent this unintentional ...

Page 17

Megabit (128K x 8-Bit) EEPROM S YMBOL 32 ® LAT ACKAGE D IMENSION 0.117 ...

Page 18

Megabit (128K x 8-Bit) EEPROM Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within ...

Page 19

Megabit (128K x 8-Bit) EEPROM Product Ordering Options Model Number 28LV011 -XX Feature Access Time Screening Flow Package Radiation Feature Base Product Nomenclature All data sheets are subject to change without notice 05.28.02 Rev 2 ...

Related keywords