FSFR2100U_10 FAIRCHILD [Fairchild Semiconductor], FSFR2100U_10 Datasheet

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FSFR2100U_10

Manufacturer Part Number
FSFR2100U_10
Description
Fairchild Power Switch (FPS) for Half-Bridge Resonant Converters
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
© 2007 Fairchild Semiconductor Corporation
FSFR series Rev.1.0.9
FSFR-Series —
for Half-Bridge Resonant Converters
Features
Applications
Ordering Information
Notes:
1.
2.
FSFR2100U
FSFR1800L
FSFR1700L
FSFR1600L
FSFR2000
FSFR1900
FSFR1800
FSFR1700
FSFR1600
Number
Variable Frequency Control with 50% Duty Cycle
for Half-bridge Resonant Converter Topology
High Efficiency through Zero Voltage Switching (ZVS)
Internal UniFET™s with Fast-Recovery Type Body
Diode (t
Fixed Dead Time (350ns) Optimized for MOSFETs
Up to 300kHz Operating Frequency
Pulse Skipping for Frequency Limit (Programmable)
at Light-Load Condition
Remote On/Off Control Using Control Pin
Protection Functions: Over-Voltage Protection
(OVP), Over-Load Protection (OLP), Over-Current
Protection (OCP), Abnormal Over-Current Protection
(AOCP), Internal Thermal Shutdown (TSD)
PDP and LCD TVs
Desktop PCs and Servers
Adapters
Telecom Power Supplies
Audio Power Supplies
The junction temperature can limit the maximum output power.
Maximum practical continuous power in an open-frame design at 50°C ambient.
Part
rr
<160ns).
9-SIP(L-Forming)
Package
9-SIP
Temperature
-40 to +130°C
Operating
Junction
Fairchild Power Switch (FPS™)
R
DS(ON_MAX)
0.51Ω
0.67Ω
0.85Ω
0.95Ω
1.25Ω
1.55Ω
0.95Ω
1.25Ω
1.55Ω
Description
The FSFR-series include highly integrated power
switches
resonant converters. Offering everything necessary to
build a reliable and robust resonant converter, the FSFR-
series simplifies designs and improves productivity, while
improving performance. The FSFR-series combines
power MOSFETs with fast-recovery type body diodes, a
high-side
controlled oscillator, frequency limit circuit, soft-start, and
built-in protection functions. The high-side gate-drive
circuit has a common-mode noise cancellation capability,
which guarantees stable operation with excellent noise
immunity. The fast-recovery body diode of the MOSFETs
improves
conditions, while minimizing the effect of the reverse
recovery.
technique dramatically reduces the switching losses and
efficiency is significantly improved. The ZVS also
reduces the switching noise noticeably, which allows a
small-sized Electromagnetic Interference (EMI) filter.
The FSFR-series can be applied to various resonant
converter topologies, such as: series resonant, parallel
resonant, and LLC resonant converters.
Related Resources
AN-4151 — Half-Bridge LLC Resonant Converter Design
Using FSFR-Series Fairchild Power Switch (FPS
Maximum Output Power
(V
without Heatsink
IN
=350~400V)
designed
gate-drive
Using
reliability
180W
160W
140W
120W
100W
120W
100W
80W
80W
the
(1,2)
for
circuit,
against
zero-voltage-switching
high-efficiency
Power with Heatsink
an
(V
Maximum Output
abnormal
IN
=350~400V)
accurate
400W
350W
300W
260W
200W
160W
260W
200W
160W
www.fairchildsemi.com
June 2010
half-bridge
operation
)
current
(1,2)
(ZVS)

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FSFR2100U_10 Summary of contents

Page 1

FSFR-Series — for Half-Bridge Resonant Converters Features Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (t <160ns). rr Fixed Dead Time (350ns) ...

Page 2

Application Circuit Diagram Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter) Block Diagram © 2007 Fairchild Semiconductor Corporation FSFR series Rev.1.0 LVcc Control CON IC ...

Page 3

Pin Configuration Pin Definitions Pin # Name 1 V This is the drain of the high-side MOSFET, typically connected to the input DC link voltage. DL This pin is for enable/disable and protection. When the voltage of this pin is ...

Page 4

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure ...

Page 5

Absolute Maximum Ratings Symbol MOSFET Section (Continued) I Continuous Drain Current D Package Section Torque Recommended Screw Torque Notes: 3. Per MOSFET when both MOSFETs are conducting. 4. The maximum value of the recommended operating junction temperature is limited by ...

Page 6

Electrical Characteristics T =25°C unless otherwise specified. A Symbol Parameter MOSFET Section BV Drain-to-Source Breakdown Voltage DSS R On-State Resistance DS(ON) Body Diode Reverse t (6) rr Recovery Time Supply Section I Offset Supply Leakage Current Quiescent ...

Page 7

Electrical Characteristics T =25°C unless otherwise specified. A Symbol Parameter UVLO Section LV UV+ LV Supply Under-Voltage Positive Going Threshold ( UV- LV Supply Under-Voltage Negative Going Threshold ( UVH LV Supply Under-Voltage Hysteresis ...

Page 8

Typical Performance Characteristics These characteristic graphs are normalized at T 1.1 1.05 1 0.95 0.9 -50 - Temp ( Figure 4. Low-Side MOSFET Duty Cycle vs. Temperature 1.1 1.05 1 0.95 0.9 -50 - ...

Page 9

Typical Performance Characteristics These characteristic graphs are normalized at T 1.1 1.05 1 0.95 0.9 -50 - Temp ( Figure 10. OLP Delay Current vs. Temperature 1.1 1.05 1 0.95 0.9 -50 - Temp ...

Page 10

Functional Description 1. Basic Operation: FSFR-series is designed to drive high-side and low-side MOSFETs complementarily with 50% duty cycle. A fixed dead time of 350ns is introduced between consecutive transitions, as shown in Figure 16. High side MOSFET gate drive ...

Page 11

Figure 19. FSFR-series also has an internal soft-start for 3ms to reduce the current overshoot during the initial cycles, which adds 40kHz to the initial frequency of the external soft-start circuit, as shown in Figure 20. The initial frequency ...

Page 12

Cr Np Control sense Ids Figure 24. Half-Wave Sensing Cr Control sense Ids Figure 25. Full-Wave Sensing Current Sensing Using Resonant Capacitor Voltage: For high-power applications, ...

Page 13

Latch-Mode Protection: Once triggered, switching is terminated and the MOSFETs remain off. The latch is reset only when LV discharged below 5V good CC V REF OCP Auto-restart OLP protection ...

Page 14

Typical Application Circuit (Half-Bridge LLC Resonant Converter) Application FPS™ Device LCD TV FSFR2100U Features High efficiency ( >94% at 400V Reduced EMI noise through zero-voltage-switching (ZVS) Enhanced system reliability with various protection functions © 2007 Fairchild Semiconductor Corporation FSFR series ...

Page 15

Typical Application Circuit Usually, LLC resonant converters require large leakage inductance value. To obtain a large leakage inductance, sectional winding method is used. Core: EER3542 (Ae=107 mm Bobbin: EER3542 (Horizontal) EC35 Pins ...

Page 16

Physical Dimensions Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or ...

Page 17

Physical Dimensions Figure 32. 9-Lead, SIP Module, L-Forming, 3.2x10.5x26mm Body Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and ...

Page 18

Fairchild Semiconductor Corporation FSFR series Rev.1.0.9 18 www.fairchildsemi.com ...

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