SGP10N60A_09 INFINEON [Infineon Technologies AG], SGP10N60A_09 Datasheet

SGP10N60A_09

Manufacturer Part Number

SGP10N60A_09

Description

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

Manufacturer

INFINEON [Infineon Technologies AG]

Datasheet

1.SGP10N60A_09.pdf (12 pages)

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Fast IGBT in NPT-technology

• 75% lower E

• Short circuit withstand time – 10 µs

• Designed for:

• NPT-Technology for 600V applications offers:

• Qualified according to JEDEC

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models :

Type

SGP10N60A

SGW10N60A

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

Pulsed collector current, t

Turn off safe operating area

Gate-emitter voltage

Avalanche energy, single pulse

start at T

Short circuit withstand time

Power dissipation

Operating junction and storage temperature

Soldering temperature,

wavesoldering, 1.6mm (0.063 in.) from case for 10s

J-STD-020 and JESD-022

Allowed number of short circuits: <1000; time between short circuits: >1s.

= 10 A, V

= 25°C

= 100°C

= 25°C

≤ 600V, T

= 15V, V

- Motor controls

- Inverter

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

combined with low conduction losses

= 25°C

off

= 50 V, R

≤ 150°C

≤ 600V, T

compared to previous generation

600V

≤ 150°C

= 25 Ω,

limited by T

10A

for target applications

jmax

2.3V

CE(sat)

http://www.infineon.com/igbt/

150°C

G10N60A

Marking

Symbol

C p u l s

S C

C E

G E

A S

t o t

, T

s t g

PG-TO-220-3-1

PG-TO-247-3

SGW10N60A

Package

SGP10N60A

-55...+150

Value

10.6

600

±20

260

PG-TO-247-3

PG-TO-220-3-1

Rev. 2.5

Unit

µs

°C

Nov 09

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SGP10N60A_09 Summary of contents

Page 1

Fast IGBT in NPT-technology • 75% lower E compared to previous generation off combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: ...

Page 2

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient = 25 °C, unless otherwise specified Electrical Characteristic Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate ...

Page 3

Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time ...

Page 4

=80°c C 40A 30A 20A T =110°c 10A 10Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency ≤ 150° 0.5, V ...

Page 5

...

Page 6

I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150° 400V 0/+15V 25Ω ...

Page 7

and E include losses on ts due to diode recovery. 1,4m J 1,2m J 1,0m J 0,8m J 0,6m J 0,4m J 0, 10A 15A I , COLLECTOR CURRENT C Figure ...

Page 8

GATE CHARGE GE ...

Page 9

PG-TO220-3-1 9 SGP10N60A SGW10N60A Rev. 2.5 Nov 09 ...

Page 10

SGP10N60A SGW10N60A 10 Rev. 2.5 Nov 09 ...

Page 11

Figure A. Definition of switching times Figure B. Definition of switching losses SGP10N60A SGW10N60A τ τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit ...

Page 12

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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