BCR08DS-14A-T13B10 RENESAS [Renesas Technology Corp], BCR08DS-14A-T13B10 Datasheet - Page 3

no-image

BCR08DS-14A-T13B10

Manufacturer Part Number
BCR08DS-14A-T13B10
Description
Triac Low Power Use Planar Passivation Type Surface Mounted Type
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
BCR08DS-14A
Performance Curves
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
10
10
10
10
10
10
10
10
10
−1
−1
1
0
1
0
1.0
3
2
1
–40
Maximum On-State Characteristics
V
Tj = 25°C
GT
Junction Temperature (°C)
1.5
= 2V
Gate Trigger Voltage vs.
10
I
I
0
Junction Temperature
On-State Voltage (V)
FGT I
RGT I
Gate Characteristics
V
1
Gate Current (mA)
GM
2.0
,
, I
= 6V
RGT III
40
2.5
P
G(AV)
V
0.1W
10
Typical Example
80
GD
2
3.0
=
= 0.2V
I
GM
0.5A
P
GM
120
=
3.5
= 1W
160
4.0
10
3
10
10
10
10
30
25
20
15
10
Maximum Transient Thermal Impedance
8
6
4
2
0
5
0
10
–40
10
3
2
1
10
Conduction Time (Cycles at 60Hz)
Conduction Time (Cycles at 60Hz)
0
−1
Characteristics (Junction to case)
2
Rated Surge On-State Current
Junction Temperature (°C)
Gate Trigger Current vs.
0
Junction Temperature
10
10
40
3
0
10
1
Typical Example
80
10
10
4
1
120
Preliminary
Page 3 of 6
160
10
10
2
2

Related parts for BCR08DS-14A-T13B10