BCR12CM12L APOLLOELECTRON [Apollo Electron Co., Ltd.], BCR12CM12L Datasheet

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BCR12CM12L

Manufacturer Part Number
BCR12CM12L
Description
Standard Triac
Manufacturer
APOLLOELECTRON [Apollo Electron Co., Ltd.]
Datasheet
1.BCR12CM12L.pdf (6 pages)
This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.
Features
◆
◆
◆
General Description
This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensi-
tivity is required in all four quadrants.
Absolute Maximum Ratings
J u l y, 2010. Rev.2
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( I
High Commutation dv/dt
Symbol
I
P
V
T(RMS)
T
Symbol
I
I
TSM
G(AV)
DRM
I
GM
T
STG
2
J
t
1.T1
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
2
▼ ▲
t
○
○
2.T2
○
3.Gate
Parameter
copyright @ Apollo Electron Co., Ltd. All rights reserved.
T(RMS)
= 1 A )
( Tj = 25°C unless otherwise specified )
I
V
I
T(RMS)
TSM
DRM
= 126A
= 800V
Sine wave, 50 to 60 Hz
T
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
= 12 A
Tj=125°C
T
j
j
=125°C
= 125 °C, Full Sine wave
Condition
TO-220F
Standard Triac
1
- 40 ~ 125
- 40 ~ 150
2
Ratings
120/126
3
TF12A80
72
12
1
2
800
Units
A
V
A
A
W
°C
°C
A
2
s
1/6

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BCR12CM12L Summary of contents

Page 1

... This device is suit able for low power AC switching application, phase control application such a s fan speed and temperature modulation control, lighting control and static switching relay where high sensi- tivity is required in all four quadrants. This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series. Absolute Maximum Ratings Symbol ...

Page 2

TF12A80 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage Ⅰ GT1 - Gate Trigger Current I Ⅱ GT1 - I Ⅲ GT3 + V Ⅰ GT1 - Gate Trigger Voltage V ...

Page 3

Fig 1. Gate Characteristics V (10V (1W) G(AV) 25 ℃ (0.2V Gate Current [mA] Fig 3. On State Current vs. Maximum Power Dissipation 16 14 θ ...

Page 4

TF12A80 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1 0.1 - Junction Temperature [ 4/6 Fig 8. Transient Thermal Impedance GT1 _ I GT1 _ I GT3 0.1 100 150 -2 10 ...

Page 5

TO-220F Package Dimension Sym bol MIN A 9.88 B 15.30 C 2.95 D 10.30 E 0.95 F 1.81 G 0.50 H 3.00 I 4.35 J 6.20 K 0.41 L 2.30 M 2. MILLIMETER S ...

Page 6

TF12A80 TO-220F Package Dimension, Forming Dim. Min. A 10.4 B 6.18 C 9.55 D 8.4 E 6.05 F 1.26 G 3.17 H 1. 2.51 M 1.23 N 0.45 O 0.65 P φ φ 1 φ ...

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