BTS3207N_08 INFINEON [Infineon Technologies AG], BTS3207N_08 Datasheet

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BTS3207N_08

Manufacturer Part Number
BTS3207N_08
Description
Smart Low Side Power Switch
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
â
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
Smart Low Side Power Switch
Source
Drain
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
DS
DS(on)
AS
HITFET BTS 3207N
4
Rev. 1.2, 2008-04-14
0.64
500
150
1
42
M
2
VPS05163
V
mW
A
mJ
3

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BTS3207N_08 Summary of contents

Page 1

Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All ...

Page 2

Maximum Ratings Parameter Drain source voltage Supply voltage for full short circuit protection 1) Continuous input voltage 2) Continuous input current -0.2V £ V £ 10V IN V < -0. > 10V IN IN Operating ...

Page 3

Electrical Characteristics Parameter 25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150 Off-state drain current T = -40...+85 ° ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics V to 90% I Turn-on time 4 10% I Turn-off time IN ...

Page 5

Block diagram Terms HITFET Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour Gate Drive Source/ Ground ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =72 K/W tot A thJA max 6cm2 1 0 -75 -50 -25 0 ...

Page 7

Typ. transfer characteristics I =f =12V Jstart Typ. output characteristics I =f =25° ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 12 A -40°C 25°C 8 85°C 6 150° 0 Determination of I D(lim ...

Page 9

Package Outlines 6.5 ±0 ±0 0.7 ±0.1 4.6 0. Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and ...

Page 10

Revision History Version Date Changes Rev. 1.2 2008-04-14 Package information updated to SOT223-4 Rev. 1.1 2007-03-28 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added ...

Page 11

Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 2008. © All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...

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