VNN7NV04_10 STMICROELECTRONICS [STMicroelectronics], VNN7NV04_10 Datasheet - Page 9

• Manufacturer Part Number: VNN7NV04_10
• Description: OMNIFET II fully autoprotected Power MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Switching (T
Source drain diode (T
Protections (-40 °C < T
Symbol
(dI/dt)
V
t
t
t
t
I
t
d(on)
d(off)
d(on)
d(off)
RRM
T
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
f
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Drain current limit
Step response current
limit
Over temperature
shutdown
Over temperature reset
Fault sink current
Single pulse avalanche
energy
j
Electrical characteristics (continued)
=25 °C, unless otherwise specified)
Parameter
j
=25 °C, unless otherwise specified)
j
< 150 °C, unless otherwise specified)
V
V
(see figure
V
V
(see figure
V
V
V
I
I
I
V
(see test circuit, figure
V
V
V
starting T
V
(see figures
gen
SD
SD
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=3.5 A; V
=3.5 A; dI/dt=20 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see figure
=15 V; I
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
=5 V; R
Doc ID 7383 Rev 3
j
=25 °C; V
gen
DS
DS
DS
Figure
Figure
D
D
D
D
gen
gen
gen
Figure 6.
IN
Test conditions
=3.5 A
=3.5 A
=3.5 A
=3.5 A; V
=13 V
=13 V
=13 V; T
=R
=0 V
=R
=2.2 KΩ
=R
IN MIN
IN MIN
IN MIN
4.)
4.)
DD
j
=150 Ω; L=24 mH
&
=T
=24 V
IN
Figure
=150 Ω
=150 Ω
Figure
=5 V
jsh
Figure
5.)
8.)
7.)
Min
150
135
200
6
Electrical specifications
0.75
0.28
Typ
100
470
500
350
220
175
4.6
5.4
3.6
6.5
0.8
2.5
4.0
18
15
9
1500
1500
1000
Max
14.0
16.0
11.0
300
200
2.3
12
A/µs
Unit
mA
mJ
nC
µC
ns
ns
ns
µs
µs
µs
µs
ns
µs
°C
°C
ns
V
A
A
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