FDMS86150 FAIRCHILD [Fairchild Semiconductor], FDMS86150 Datasheet
FDMS86150
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FDMS86150 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86150 FDMS86150 ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 13 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 726 mJ is based on starting mH ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... 200 150 100 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev. °C unless otherwise noted μ ...
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... MAX RATED 115 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev. °C unless otherwise noted J 10000 = 1000 100 125 100 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev. °C unless otherwise noted J SINGLE PULSE 115 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 6 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...