FDC602P_01

Manufacturer Part NumberFDC602P_01
DescriptionP-Channel 2.5V PowerTrench Specified MOSFET
ManufacturerFAIRCHILD [Fairchild Semiconductor]
FDC602P_01 datasheet
 


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FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Battery management
Load switch
Battery protection
S
D
D
D
TM
SuperSOT -6
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Maximum Power Dissipation
D
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
JA
Thermal Resistance, Junction-to-Case
R
J C
Package Marking and Ordering Information
Device Marking
Device
.602
FDC602P
2001 Fairchild Semiconductor Corporation
Features
–5.5 A, –20 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Reel Size
7’’
April 2001
R
= 35 m @ V
= –4.5 V
DS(ON)
GS
R
= 50 m @ V
= –2.5 V
DS(ON)
GS
1
6
2
5
3
4
Ratings
Units
–20
V
V
12
–5.5
A
–20
1.6
W
0.8
–55 to +150
C
78
C/W
30
C/W
Tape width
Quantity
8mm
3000 units
FDC602P Rev C(W)

FDC602P_01 Summary of contents

  • Page 1

    FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

  • Page 3

    Typical Characteristics 20 V =-4.5V GS -3.0V 16 -3.5V -2. 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -4.5V GS ...

  • Page 4

    Typical Characteristics 5 V =-5. -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s ...

  • Page 5

    TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ HiSeC™ ...