FDC604P_01 FAIRCHILD [Fairchild Semiconductor], FDC604P_01 Datasheet

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FDC604P_01

Manufacturer Part Number
FDC604P_01
Description
P-Channel 1.8V Specified PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDC604P_01.pdf (5 pages)
FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
optimized
.604
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
for
1.8V
D
battery
D
specified
TM
S
– Continuous
– Pulsed
FDC604P
power
Device
Parameter
D
MOSFET
D
management
G
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–5.5 A, –20 V.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–5.5
–20
–20
1.6
0.8
78
30
8
= 33 m @ V
= 43 m @ V
= 60 m @ V
January 2001
6
5
4
GS
GS
GS
3000 units
FDC604P Rev C (W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C

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FDC604P_01 Summary of contents

Page 1

FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified Fairchild’s low voltage PowerTrench process. It has been optimized for battery power applications. Applications Battery management Load switch Battery protection SuperSOT -6 Absolute ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

Page 3

Typical Characteristics -4.5V GS -2.0V -2.5V 15 -1. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -4.5V GS 1.3 1.2 1.1 ...

Page 4

Typical Characteristics - -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 1ms 10ms 100ms 1 ...

Page 5

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ISOPLANAR™ ...

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