FDC604P_01

Manufacturer Part NumberFDC604P_01
DescriptionP-Channel 1.8V Specified PowerTrench MOSFET
ManufacturerFAIRCHILD [Fairchild Semiconductor]
FDC604P_01 datasheet
 


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FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
P-Channel
1.8V
specified
Fairchild’s low voltage PowerTrench process. It has
been
optimized
for
battery
power
applications.
Applications
Battery management
Load switch
Battery protection
S
D
D
D
TM
SuperSOT -6
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Maximum Power Dissipation
D
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
JA
Thermal Resistance, Junction-to-Case
R
JC
Package Marking and Ordering Information
Device Marking
Device
.604
FDC604P
2001 Fairchild Semiconductor Corporation
Features
MOSFET
uses
–5.5 A, –20 V.
management
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
G
D
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Reel Size
7’’
January 2001
R
= 33 m @ V
= –4.5 V
DS(ON)
GS
R
= 43 m @ V
= –2.5 V
DS(ON)
GS
R
= 60 m @ V
= –1.8 V
DS(ON)
GS
1
6
2
5
3
4
Ratings
Units
–20
V
V
8
–5.5
A
–20
1.6
W
0.8
–55 to +150
C
78
C/W
30
C/W
Tape width
Quantity
8mm
3000 units
FDC604P Rev C (W)

FDC604P_01 Summary of contents

  • Page 1

    FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified Fairchild’s low voltage PowerTrench process. It has been optimized for battery power applications. Applications Battery management Load switch Battery protection SuperSOT -6 Absolute ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

  • Page 3

    Typical Characteristics -4.5V GS -2.0V -2.5V 15 -1. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -4.5V GS 1.3 1.2 1.1 ...

  • Page 4

    Typical Characteristics - -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 1ms 10ms 100ms 1 ...

  • Page 5

    TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ISOPLANAR™ ...