M30622M4 MITSUBISHI [Mitsubishi Electric Semiconductor], M30622M4 Datasheet - Page 196

• Manufacturer Part Number: M30622M4
• Description: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Timing (Vcc = 5V)
196
Figure 1.26.6. V
Memory Expansion Mode and Microprocessor Mode
(When accessing external memory area with wait, and select multiplexed bus)
Write timing
Read timing
RD
CSi
ADi
/DBi
BHE
WRH
BCLK
CSi
ADi
/DBi
ADi
BHE
ALE
BCLK
ADi
ALE
WR,WRL,
t
t
d(AD–ALE)
d(BCLK–ALE)
25ns.max
25ns.max
t
CC
d(BCLK–ALE)
(tcyc/2-25)ns.min
=5V timing diagram (5)
t
d(BCLK–CS)
t
d(BCLK–AD)
t
t
25ns.max
t
d(BCLK–AD)
d(BCLK–CS)
25ns.max
25ns.max
25ns.max
d(AD–ALE)
(tcyc/2–25)ns.min
Measuring conditions :
• V
• Input timing voltage : Determined with V
• Output timing voltage : Determined with V
t
CC
h(BCLK–ALE)
Address
Address
=5V
t
dz(RD–AD)
–4ns.min
t
8ns.max
h(BCLK–ALE)
–4ns.min
t
d(BCLK–DB)
t
t
40ns.max
t
h(ALE–AD)
d(BCLK–RD)
t
d(BCLK–WR)
30ns.min
d(AD–WR)
25ns.max
25ns.max
0ns.min
t
d(AD–RD)
0ns.min
tcyc
tcyc
tac3(RD–DB)
(tcyc*3/2–40)ns.min
t
Data output
d(DB–WR)
IL
=0.8V, V
OL
(tcyc/2)ns.min
=0.8V, V
(tcyc/2)ns.min
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
t
IH
t
h(RD–CS)
Data input
t
SU(DB–RD)
h(WR–CS)
=2.5V
40ns.min
OH
=2.0V
(tcyc/2)ns.min
t
(tcyc/2)ns.min
t
(tcyc/2)ns.min
h(BCLK–WR)
h(BCLK–RD)
t
t
h(WR–DB)
h(WR–AD)
t
0ns.min
t
h(RD–AD)
0ns.min
h(RD–DB)
0ns.min
V
Mitsubishi microcomputers
CC
M16C / 62 Group
t
t
h(BCLK–CS)
t
h(BCLK–AD)
h(BCLK–AD)
t
t
4ns.min
4ns.min
h(BCLK–DB)
h(BCLK–CS)
4ns.min
4ns.min
4ns.min
= 5V
Address
Address