M30622M4 MITSUBISHI [Mitsubishi Electric Semiconductor], M30622M4 Datasheet - Page 234

• Manufacturer Part Number: M30622M4
• Description: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Description (Flash Memory Version)
234
Outline Performance
Table 1.28.1. Outline Performance of the M16C/62 (flash memory version)
Table 1.28.2. Power supply current (typ.) of the M16C/62 (flash memory version)
Note1: The boot ROM area contains a standard serial I/O mode control program which is stored in it when shipped from the factory.
Note2: Refer to recommended operating conditions about 5 V version. 3V version relationship between main clock oscillation
Note3: Refer to electric characteristic about 5V version.
Note4: A standard value in stop and wait modes do not depend on a kind of memory to have built-in and is the same class. Refer to
3V power supply current(3V version)
5V power supply current(5V version)
3V power supply current(5V version)
Table 1.28.1 shows the outline performance of the M16C/62 (flash memory version) and Table 1.28.2
shows the power supply current( Typ.).
Power supply voltage
Program/erase voltage
Erase block
division
Program method
Program/erase control method
Protect method
Number of commands
Program/erase count
ROM code protect
3V version main clock input
oscillation frequency(Max.)
(Note2)
3V version power supply
current (Notes 3, 4)
Flash memory operation mode
Erase method
This area can be erased and programmed in only parallel I/O mode.
frequency and supply voltage are as follows.
electric characteristic in V
Parameter
Item
Main clock input oscillation frequency
(flash memory 3V version, without wait)
User ROM area
Boot ROM area
10.0
7.0
0.0
Supply voltage
10 X V
CC
f(X
f(X
f(X
- 17MH
2.4
CC
IN
IN
IN
)=10MHz, without wait, No division
)=10MHz, with wait, No division
)=16MHz, without wait, No division
[V] (BCLK: no division)
=3V.
Z
12.0mA(Typ.), 21.25mA(Max.) (V
Three modes (parallel I/O, standard serial I/O, CPU rewrite)
10 X V
40µA(Typ.) (V
700µA(Typ.) (V
5V version: 2.7V to 5.5 V
3V version: 2.4V to 3.6 V
3V version: 2.7V to 3.6 V
In units of pages (in units of 256 bytes)
Collective erase/block erase
Program/erase control by software command
Protected for each block by lock bit
100 times
Parallel I/O and standard serial modes are supported.
5V version: 4.2V to 5.5 V
See Figure 1.28.1
One division (8 Kbytes) (Note 1)
8 commands
10MHz (V
Measuring condition
2.7
CC
(f(X
f(X
(f(X
(f(X
f(X
(f(X
f(X
f(X
IN
IN
IN
- 17 MHz (V
CC
IN
IN
IN
IN
IN
)=10MHz, with one wait, 2.7V to 5.5V)
)=6.25MHz, without wait)
)=6.25MHz, without wait)
)=7MHz, without wait, 2.4V to 3.6V)
)=16MHz, without wait, 4.2V to 5.5V,
)=10MHz, without wait, 2.7V to 3.6V,
)=10MHz, with one wait,
)=12.5MHz, with one wait,
=2.7V to 3.6V,without wait)
CC
CC
=3V, f(X
=3V, f(X
3.6
CC
=2.4V to 2.7V,without wait)
CIN
CIN
Read
35mA
13.5mA
12mA
)=32kHz, square wave, without wait) [operate in RAM]
)=32kHz, square wave, without wait) [operate in flash memory]
CC
Standard (Typ.)
=3V, f(X
Program
Performance
28mA
17mA
-
IN
)=10MHz, square wave, no division, without wait)
Erase
25mA
14mA
-
Division by 4 in program/erase
Division by 2 in program/erase
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Remark
Mitsubishi microcomputers
M16C / 62 Group