MCH6601_06 SANYO [Sanyo Semicon Device], MCH6601_06 Datasheet

MCH6601_06

Manufacturer Part Number

MCH6601_06

Description

General-Purpose Switching Device Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.MCH6601_06.pdf (4 pages)

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Ordering number : EN6458B

MCH6601

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Low ON-resistance.

Ultrahigh-speed switching.

1.5V drive.

Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

70306 / 42806 MS IM TB-00002289 / O3105PE MS IM TB-00001865 / N2499 TS IM TA-2457

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GSS

V DSS

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

http://semicon.sanyo.com/en/network

SANYO Semiconductors

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0V

V DS =- -30V, V GS =0V

V GS = 8V, V DS =0V

V DS =- -10V, I D =--100 A

V DS =- -10V, I D =--50mA

I D =--50mA, V GS =--4V

I D =--30mA, V GS =--2.5V

I D =--1mA, V GS =- -1.5V

V DS =- -10V, f=1MHz

MCH6601

Conditions

0.8mm) 1unit

DATA SHEET

min

--0.4

--30

Ratings

typ

Ratings

110

7.5

5.7

1.8

Continued on next page.

--55 to +150

max

--0.2

--0.8

10.4

15.4

150

--1.4

--30

0.8

--1

No.6458-1/4

Unit

Related parts for MCH6601_06

MCH6601_06 Summary of contents

Page 1

Ordering number : EN6458B MCH6601 Features Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source ...

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MCH6601_06 SANYO [Sanyo Semicon Device], MCH6601_06 Datasheet

MCH6601_06

Related parts for MCH6601_06

MCH6601_06 Summary of contents

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