TC2111 TRANSCOM [Transcom, Inc.], TC2111 Datasheet

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TC2111

Manufacturer Part Number
TC2111
Description
Plastic Packaged Low Noise PHEMT GaAs FETs
Manufacturer
TRANSCOM [Transcom, Inc.]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TC2111
Quantity:
1 400
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
ABSOLUTE MAXIMUM RATINGS (T
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Symbol
BV
The TC2111 is a high performance field effect transistor housed in a plastic package with TC1101 PHEMT
Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 %
DC tested to assure consistent quality.
P
I
1.5 dB Typical Noise Figure at 12 GHz
High Associated Gain: Ga = 7 dB Typical at 12 GHz
18.5 dBm Typical Power at 12 GHz
8 dB Typical Linear Power Gain at 12 GHz
Lg = 0.25 m, Wg = 160 m
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Low Cost Plastic SOT143 Package
NF
Symbol
R
G
G
V
DSS
g
1dB
m
DGO
T
th
V
V
a
L
P
T
I
I
P
P
STG
DS
GS
CH
DS
GS
in
T
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Parameter
DS
Plastic Packaged Low Noise PHEMT GaAs FETs
= 2 V, I
DS
DS
DS
= 2 V, I
= 2 V, I
= 2 V, V
th
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
= 10 mA, f = 12GHz
DS
D
= 10 mA, f = 12GHz
DS
GS
= 0.32mA
CONDITIONS
- 65
DGO
= 6 V, I
DS
= 0 V
= 2 V, V
= 0.08mA
150 mW
160 A
Rating
18dBm
C
175
-3.0 V
A
7.0 V
I
to +175
=25 C)
A
DSS
Phone: 886-6-5050086
DS
=25 C)
C
= 25 mA
GS
= 0 V
C
* For the tight control of the pinch-off voltage range, we divide
P 1 / 4
(1) TC2111P0710 : Vp = -0.7V to -1.0V
(2) TC2111P0811 : Vp = -0.8V to -1.1V
(3) (3)TC2111P0912 : Vp = -0.9V to -1.2V
TC2111 into 3 model numbers to fit customer design
requirement
If required, customer can specify the requirement in
purchasing document. For special Vp requirement, please
contact factory for details.
DS
= 6 V, I
DS
= 25 mA
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
17.5
6
7
9
-1.0*
TYP
18.5
250
1.5
48
55
12
7
8
MAX
1.8
REV4_20070504
TC2111
UNIT
Volts
Volts
dBm
mA
C/W
mS
dB
dB
dB

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TC2111 Summary of contents

Page 1

... Low Cost Plastic SOT143 Package DESCRIPTION The TC2111 is a high performance field effect transistor housed in a plastic package with TC1101 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ...

Page 2

... Fax: 886-6-5051602 TC2111 REV4_20070504 ANG 70.43 58.30 49.04 40.94 36.81 33.14 31.79 33.34 ...

Page 3

... Fax: 886-6-5051602 TC2111 REV4_20070504 ANG 54.22 50.26 44.76 40.01 36.81 33.01 31.91 33.89 ...

Page 4

... PLCS) TYP. 0.051(MIN PLCS) 0.127(MAX) TYP. 1.5 7” 3000 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 PLCS) TYP 0.31 0 PLCS) 0.1 TYP. TYP. 1.0 (MIN) 0.05 0.3 Fax: 886-6-5051602 TC2111 REV4_20070504 ...

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