2N3702_02 FAIRCHILD [Fairchild Semiconductor], 2N3702_02 Datasheet
2N3702_02
Manufacturer Part Number
2N3702_02
Description
PNP General Purpose Amplifier
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.2N3702_02.pdf
(3 pages)
©2002 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
• Sourced from Process 68.
• See PN200 for Characteristics.
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse
Thermal Characteristics
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
C
f
P
R
R
C
CBO
EBO
T
switches requiring collector currents to 300mA.
FE
J
Symbol
CEO
CBO
EBO
CE
BE
D
ob
Symbol
, T
JC
JA
(BR)CEO
(BR)CBO
(BR)EBO
Symbol
(sat)
(sat)
ST
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
300 s, Duty Cycle
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
2.0%
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
- Continuous
=25 C unless otherwise noted
2N3702
I
I
V
I
V
V
I
V
V
I
C
C
E
C
E
CB
EB
CE
CE
CB
= -10mA, I
= -100 A, I
= -100 A, I
= -50mA, I
= -50mA, V
= -5.0V, I
= -5.0V, I
= -20V, I
= -3.0V, I
= -10V, f = 1.0MHz
Test Condition
B
E
B
C
C
E
C
C
CE
= 0
= 0
= -5.0mA
= -50mA
= -50mA
= 0
= 0
= 0
= -5.0V
Max.
83.3
625
200
5.0
1. Emitter 2. Collector 3. Base
1
Min.
-5.0
-0.6
100
-25
-40
-55 ~ +150
60
Value
-500
-5.0
-25
-40
Typ.
TO-92
-0.25
Max.
-100
-100
300
-1.0
mW/ C
12
Units
mW
C/W
C/W
Units
mA
V
V
V
Rev. B, July 2002
C
Units
MHz
nA
nA
pF
V
V
V
V
V
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2N3702_02 Summary of contents
Page 1
PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 68. • See PN200 for Characteristics. PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Symbol V ...
Page 2
Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, July 2002 ...
Page 3
CROSSVOLT â â â â Rev. I ...