2SA1588_07 TOSHIBA [Toshiba Semiconductor], 2SA1588_07 Datasheet
2SA1588_07
Manufacturer Part Number
2SA1588_07
Description
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1588_07.pdf
(3 pages)
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
Excellent h
Complementary to 2SC4118
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
h
FE (1)
FE (2)
Characteristics
Characteristics
FE
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
classification O: 25 (min), Y: 40 (min), GR: 75 (min)
linearity : h
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
at V
FE (2)
(Note)
CE
(Ta = 25°C)
= 25 (min)
= −6 V, I
(Ta = 25°C)
V
Symbol
Symbol
h
h
V
V
V
CE (sat)
I
I
FE (1)
FE (2)
V
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
f
stg
BE
C
B
T
ob
C
2SA1588
j
C
= −400 mA
V
V
V
V
I
V
V
V
C
CB
EB
CE
CE
CE
CE
CB
= −100 mA, I
−55~125
Rating
= −35 V, I
= −5 V, I
= −1 V, I
= −6 V, I
= −1 V, I
= −6 V, I
= −6 V, I
−500
−35
−30
−50
100
125
−5
1
Test Condition
C
C
C
C
C
E
E
= 0
= 0, f = 1 MHz
= −100 mA
= −400 mA
= −100 mA
= −20 mA
B
= 0
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
) Marking Symbol
Min
70
25
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
−0.8
200
13
⎯
⎯
⎯
⎯
2-2E1A
SC-70
2007-11-01
−0.25
―
2SA1588
−0.1
−0.1
−1.0
Max
400
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
V
V
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2SA1588_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent h linearity : ( • Complementary to 2SC4118 Absolute Maximum Ratings Characteristics Collector-base ...
Page 2
2 2SA1588 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...