2N3055A_06

Manufacturer Part Number2N3055A_06
DescriptionComplementary Silicon High-Power Transistors
ManufacturerONSEMI [ON Semiconductor]
2N3055A_06 datasheet
 


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2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
Current−Gain − Bandwidth−Product @ I
f
= 0.8 MHz (Min) − NPN
T
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ T
= 25_C
C
Derate above 25_C
2N3055A
Total Device Dissipation @ T
= 25_C
C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
60, 120 VOLTS − 115, 180 WATTS
= 1.0 Adc
C
Symbol
Value
Unit
V
Vdc
CEO
60
120
V
Vdc
CBO
100
200
V
Vdc
CEV
100
200
V
7.0
Vdc
EBO
I
15
Adc
C
I
7.0
Adc
B
P
115
W
D
0.65
W/_C
180
1.03
_C
T
, T
−65 to +200
J
stg
Symbol
Max
Max
Unit
_C/W
R
1.52
0.98
qJC
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
MJ1501xG
AYWW
AYWW
MEX
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Publication Order Number:
2N3055A/D

2N3055A_06 Summary of contents

  • Page 1

    MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power ...

  • Page 2

    MJ15015 (NPN), MJ15016 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL ...

  • Page 3

    MJ15015 (NPN), MJ15016 (PNP) 200 150 100 200 T = 150°C J 100 70 50 −55 ° 25° 4 0.2 0.3 0.5 0.7 1 ...

  • Page 4

    MJ15015 (NPN), MJ15016 (PNP + −11 V ≤ −5 V DUTY CYCLE = 1.0% Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) ...

  • Page 5

    MJ15015 (NPN), MJ15016 (PNP) NPN 10,000 1000 100 T = 150° 100°C 1 CES REVERSE FORWARD 0.1 25°C 0.01 +0.2 +0.1 0 −0.1 −0 BASE−EMITTER ...

  • Page 6

    MJ15015 (NPN), MJ15016 (PNP 0.13 (0.005 −Q− 0.13 (0.005) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks ...