2N3055A_06 ONSEMI [ON Semiconductor], 2N3055A_06 Datasheet
2N3055A_06
Manufacturer Part Number
2N3055A_06
Description
Complementary Silicon High-Power Transistors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.2N3055A_06.pdf
(6 pages)
2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
Complementary Silicon
High−Power Transistors
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage Base
Reversed Biased
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ T
Derate above 25_C
Total Device Dissipation @ T
Derate above 25_C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
These PowerBaset complementary transistors are designed for
Current−Gain − Bandwidth−Product @ I
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
f
T
Characteristics
= 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
MJ15015 and MJ15016 are Preferred Devices
Rating
MJ15015, MJ15016
MJ15015, MJ15016
MJ15015, MJ15016
MJ15015, MJ15016
(Note 1)
C
C
2N3055A
2N3055A
2N3055A
= 25_C
2N3055A
= 25_C
Symbol
Symbol
T
V
V
V
V
R
J
P
, T
CEO
CBO
EBO
CEV
I
I
qJC
C
C
B
D
stg
= 1.0 Adc
−65 to +200
Max
1.52
Value
0.65
1.03
120
100
200
100
200
180
115
7.0
7.0
60
15
Max
0.98
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
W
60, 120 VOLTS − 115, 180 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
COMPLEMENTARY SILICON
POWER TRANSISTORS
2N3055AG
ORDERING INFORMATION
2N3055A = Device Code
MJ1501x = Device Code
G
A
Y
WW
MEX
AYWW
MEX
MARKING DIAGRAMS
http://onsemi.com
15 AMPERE
TO−204AA (TO−3)
CASE 1−07
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
STYLE 1
x = 5 or 6
Publication Order Number:
MJ1501xG
AYWW
MEX
2N3055A/D
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2N3055A_06 Summary of contents
Page 1
MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power ...
Page 2
MJ15015 (NPN), MJ15016 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL ...
Page 3
MJ15015 (NPN), MJ15016 (PNP) 200 150 100 200 T = 150°C J 100 70 50 −55 ° 25° 4 0.2 0.3 0.5 0.7 1 ...
Page 4
MJ15015 (NPN), MJ15016 (PNP + −11 V ≤ −5 V DUTY CYCLE = 1.0% Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) ...
Page 5
MJ15015 (NPN), MJ15016 (PNP) NPN 10,000 1000 100 T = 150° 100°C 1 CES REVERSE FORWARD 0.1 25°C 0.01 +0.2 +0.1 0 −0.1 −0 BASE−EMITTER ...
Page 6
MJ15015 (NPN), MJ15016 (PNP 0.13 (0.005 −Q− 0.13 (0.005) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks ...