MJE3055TG-TA3-T UTC [Unisonic Technologies], MJE3055TG-TA3-T Datasheet - Page 2

• Manufacturer Part Number: MJE3055TG-TA3-T
• Description: HIGH VOLTAGE TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

MJE3055T
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note)
Base-Emitter on Voltage
DC Current Gain (Note)
Current Gain Bandwidth Product
Note: Pulse test: PW≤300μs, duty cycle≤2% Pulse
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Collector Current
Base Current
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
TO-220
TO-251/TO-252
SYMBOL
V
V
V
BV
BV
BV
CE(SAT)1
CE(SAT)2
I
I
I
h
h
I
BE(ON)
CBO
CEO
CEX
EBO
f
FE1
FE2
CEO
CBO
EBO
T
(T
(Ta=25°С, unless otherwise specified)
C
=25°С, unless otherwise specified)
I
I
I
V
V
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
CE
CE
EB
CE
CE
CE
CE
=200mA
=10mA
=10mA
=4A, I
=10A, I
=70V
=30V
=70V, V
=5V
=4V, I
=4V , I
=4V , I
=10V, I
TEST CONDITIONS
SYMBOL
B
V
V
V
T
=0.4A
B
P
C
T
CBO
CEO
=3.3A
EBO
I
I
STG
C
C
C
B
=4A
C
D
J
=4A
=10A
EB(OFF)
=0.5A, f=1MHz
=1.5V
NPN SILICON TRANSISTOR
-55 ~ +150
RATINGS
150
70
60
75
20
10
5
6
MIN
60
70
20
5
5
2
TYP MAX UNIT
700
100
QW-R203-011.C
1.1
1.8
1
1
5
8
UNIT
°С
°С
W
W
V
V
V
A
A
2 of 2
MHZ
mA
mA
mA
μA
V
V
V
V
V
V