2SA1774_06 ONSEMI [ON Semiconductor], 2SA1774_06 Datasheet
2SA1774_06
Manufacturer Part Number
2SA1774_06
Description
PNP Silicon General Purpose Amplifier Transistor
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.2SA1774_06.pdf
(4 pages)
2SA1774
PNP Silicon General
Purpose Amplifier Transistor
applications. This device is housed in the SC−75/SOT−416/SC−90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
This PNP transistor is designed for general purpose amplifier
Reduces Board Space
High h
Low V
Available in 8 mm, 7−inch/3000 Unit Tape and Reel
Pb−Free Packages are Available*
minimum recommended footprint.
FE
CE(sat)
Characteristic
, 210−460 (typical)
Rating
, < 0.5 V
(T
A
= 25°C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
T
P
T
I
stg
C
D
J
−55 ~ + 150
Value
−100
−6.0
Max
−60
−50
150
150
1
mAdc
Unit
Unit
mW
Vdc
Vdc
Vdc
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation may vary depending
(Note: Microdot may be in either location)
upon manufacturing location.
ORDERING INFORMATION
F9
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
CASE 463−01
= Device Code
= Date Code*
= Pb−Free Package
1
COLLECTOR
STYLE 1
SC−75
F9 M G
3
1
3
G
Publication Order Number:
EMITTER
2
2
2SA1774/D
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2SA1774_06 Summary of contents
Page 1
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Collector−Base Breakdown Voltage = −50 mAdc Collector−Emitter Breakdown Voltage (I = −1.0 mAdc Emitter−Base Breakdown Voltage = −50 mAdc Collector−Base ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS T = 25°C A 120 COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0 BASE ...
Page 4
PL 0.20 (0.008 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered ...