MJE13005D_09 KEC [KEC(Korea Electronics)], MJE13005D_09 Datasheet
MJE13005D_09
Manufacturer Part Number
MJE13005D_09
Description
TRIPLE DIFFUSED NPN TRANSISTOR
Manufacturer
KEC [KEC(Korea Electronics)]
Datasheet
1.MJE13005D_09.pdf
(4 pages)
2009. 2. 26
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
*Reverse recovery tims (di/dt=10A/ S)
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
FE
CHARACTERISTIC
CHARACTERISTIC
Classification R : 18~27, O : 23~35
Revision No : 4
DC
Pulse
SEMICONDUCTOR
TECHNICAL DATA
SYMBOL
SYMBOL
V
V
V
V
V
h
h
T
I
P
I
I
T
I
CBO
CEO
EBO
CP
FE
FE
CE(sat)
BE(sat)
C
C
B
stg
EBO
t
V
t
C
f
t
stg
t
j
on
T
rr
ob
f
(1)
(2)
F
-55 150
RATING
V
V
V
I
I
I
I
I
V
V
I
I
I
I
C
C
C
C
C
F
F
F
F
800
400
150
EB
CE
CE
CB
CE
=2A
=0.4A
=1A
=2A
=1A, I
=2A, I
=4A, I
=1A, I
=2A, I
I
DUTY CYCLE
10
10
75
B1
I
5
2
B1
=9V, I
=5V, I
=5V, I
=10V, I
=0.4A, I
=10V, f=1MHz
300 S
B
Equivalent Circuit
B
B
B
B
B
B2
=0.2A
=0.5A
=1A
=0.2A
=0.5A
TEST CONDITION
C
C
C
=-1A
=0
=1A
=2A
C
UNIT
< =
=0.5A
I
W
V
V
V
A
A
2%
C
B2
E
INPUT
I
I
B1
B2
V
OUTPUT
CC
E
I
K
TRIPLE DIFFUSED NPN TRANSISTOR
D
=300V
1
1
M
N
A
2
2
N
3
3
MJE13005D
MIN.
L
1. BASE
2. COLLECTOR
3. EMITTER
18
8
4
2
-
-
-
-
-
-
-
-
-
-
-
-
-
F
G
Q
TO-220AB
B
J
O
TYP.
800
P
1.4
1.9
H
C
65
-
-
-
-
-
-
-
-
-
-
-
-
-
DIM MILLIMETERS
M
A
D
G
H
K
N
O
B
C
E
F
L
Q
J
P
I
MAX.
0.15
0.5
0.6
1.2
1.6
0.8
1.6
10
35
1
5
-
-
-
-
-
-
1.3+0.1/-0.05
0.5+0.1/-0.05
15.95 MAX
13.08 0.3
1.27 0.1
2.54 0.2
9.9 0.2
4.5 0.2
2.4 0.2
9.2 0.2
0.8 0.1
2.8 0.1
1.4 0.1
3.6
1.46
3.7
+ _
+ _
+ _
+ _
+ _
+ _
1.5
+ _
+ _
+ _
+ _
+ _
UNIT
0.2
MHz
pF
nS
V
V
V
A
S
S
S
S
S
1/4
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MJE13005D_09 Summary of contents
Page 1
SEMICONDUCTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC ...
Page 2
Fig 1. h 100 T =125 0.01 0.1 COLLECTOR CURRENT I Fig 3. h 100 T =125 - 0.01 0.1 COLLECTOR CURRENT I Fig 5. ...
Page 3
Fig 7. t 1.6 1.4 1.2 1.0 0.8 1.0 FORWARD CURRENT I Fig 9. SAFE OPERATING AREA 100 10 1 0.1 0.01 10 100 COLLECTOR-EMITTER VOLTAGE V Fig 11. REVERSE BIASED SAFE OPERATING AREA ...
Page 4
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base ...