MJE13005_06 ONSEMI [ON Semiconductor], MJE13005_06 Datasheet - Page 3

• Manufacturer Part Number: MJE13005_06
• Description: 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS
• Manufacturer: ONSEMI [ON Semiconductor]

10 k
100
100
1.3
1.1
0.9
0.7
0.5
0.3
0.1
1 k
70
50
30
20
10
10
−0.4
7
5
0.04
1
0.04
0.06
0.06
V
CE
REVERSE
= 250 V
Figure 5. Collector Cutoff Region
T
−0.2
0.1
Figure 3. Base−Emitter Voltage
0.1
J
V
V
V
= 150°C
BE
V
V
BE(sat)
BE(on)
Figure 1. DC Current Gain
CE
CE
125°C
I
I
100°C
T
, BASE−EMITTER VOLTAGE (VOLTS)
C
C
50°C
75°C
J
T
25°C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
= 2 V
= 5 V
−55 °C
= 150°C
J
@ V
= −55°C
@ I
25°C
0.2
0.2
C
CE
150°C
/I
25°C
25°C
0
B
= 2 V
= 4
0.4
0.4
0.6
+0.2
0.6
FORWARD
1
1
+0.4
2
2
http://onsemi.com
MJE13005
+0.6
4
4
3
0.55
0.45
0.35
0.25
0.15
0.05
700
500
300
200
100
1.6
1.2
0.8
0.4
2 k
1 k
70
50
30
20
2
0
0.04
0.03
0.3
Figure 4. Collector−Emitter Saturation Voltage
0.06
0.05
Figure 2. Collector Saturation Region
I
C
0.5
= 1 A
0.1
I
C
/I
B
C
1
I
0.1
V
C
= 4
ib
R
Figure 6. Capacitance
, COLLECTOR CURRENT (AMP)
3
, REVERSE VOLTAGE (VOLTS)
I
B
, BASE CURRENT (AMP)
0.2
5
2 A
0.2
10
0.3
0.4
3 A
30
25°C
0.6
0.5
4 A
50
0.7
1
T
J
150°C
1
= −55°C
100
T
J
2
= 25°C
C
2
ob
300
4
3