MJE13009_06

Manufacturer Part NumberMJE13009_06
Description12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
ManufacturerONSEMI [ON Semiconductor]
MJE13009_06 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (149Kb)Embed
Next
MJE13009
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
The MJE13009 is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
V
400 V and 300 V
CEO(sus)
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t
100_C is 120 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Total Device Dissipation @ T
= 25_C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
= 100_C
C
@ 8 A,
c
Symbol
Value
Unit
V
400
Vdc
CEO(sus)
V
700
Vdc
CEV
V
9
Vdc
EBO
I
12
Adc
C
I
24
CM
I
6
Adc
B
I
12
BM
I
18
Adc
E
I
36
EM
P
2
W
D
16
W/_C
P
100
W
D
800
W/_C
_C
T
, T
−65 to
J
stg
+150
Symbol
Max
Unit
_C/W
R
62.5
qJA
_C/W
R
1.25
qJC
_C
T
275
L
Device
MJE13009
MJE13009G
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
1
STYLE 1
2
3
MARKING DIAGRAM
MJE13009G
AY WW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping
TO−220
50 Units / Rail
TO−220
50 Units / Rail
(Pb−Free)
Publication Order Number:
MJE13009/D