MJE13009_06 ONSEMI [ON Semiconductor], MJE13009_06 Datasheet

MJE13009_06

Manufacturer Part Number

MJE13009_06

Description

12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.MJE13009_06.pdf (10 pages)

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MJE13009

SWITCHMODEt Series

NPN Silicon Power

Transistors

switching inductive circuits where fall time is critical. They are

particularly suited for 115 and 220 V SWITCHMODE applications

such as Switching Regulators, Inverters, Motor Controls,

Solenoid/Relay drivers and Deflection circuits.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

February, 2006 − Rev. 7

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Base Current

Emitter Current

Total Device Dissipation @ T

Derate above 25°C

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

The MJE13009 is designed for high−voltage, high−speed power

100_C is 120 ns (Typ)

Reverse Bias SOA with Inductive Loads @ T

Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C t

700 V Blocking Capability

SOA and Switching Applications Information

Pb−Free Package is Available*

CEO(sus)

400 V and 300 V

Characteristics

Rating

− Continuous

− Peak (Note 1)

− Continuous

− Peak (Note 1)

− Continuous

− Peak (Note 1)

Preferred Device

= 25_C

Symbol

CEO(sus)

, T

CEV

EBO

qJA

qJC

stg

= 100_C

Value

−65 to

+150

Max

62.5

1.25

400

700

100

800

275

@ 8 A,

W/_C

_C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

MJE13009

MJE13009G

Device

400 VOLTS − 100 WATTS

POWER TRANSISTOR

ORDERING INFORMATION

WW = Work Week

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

12 AMPERE

= Assembly Location

= Year

= Pb−Free Package

(Pb−Free)

MJE13009G

Package

TO−220

AY WW

CASE 221A−09

Publication Order Number:

TO−220AB

STYLE 1

50 Units / Rail

Shipping

MJE13009/D

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