MJE13009_06 ONSEMI [ON Semiconductor], MJE13009_06 Datasheet - Page 4

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MJE13009_06

Manufacturer Part Number
MJE13009_06
Description
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
10K
100
0.1
1.4
1.2
0.8
0.6
0.4
1K
10
50
30
20
10
1
7
5
1
−0.4
0.2
0.2
Figure 7. Base−Emitter Saturation Voltage
0.3
0.3
T
V
J
CE
= 150°C
REVERSE
125°C
100°C
= 250 V
Figure 9. Collector Cutoff Region
75°C
50°C
−0.2
0.5
25°C
0.5
V
BE
Figure 5. DC Current Gain
I
I
, BASE−EMITTER VOLTAGE (VOLTS)
C
C
0.7
0.7
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
I
C
/I
B
1
1
= 3
25°C
0
V
CE
55°C
25°C
= 5 V
2
2
T
J
= 150°C
T
3
+0.2
J
3
FORWARD
= −55°C
150°C
5
5
+0.4
7
7
10
10
http://onsemi.com
+0.6
20
20
MJE13009
4
800
600
400
200
100
4K
2K
1K
80
60
40
1.6
1.2
0.8
0.4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2
0
0
0.05
0.1
0.2
0.07
I
0.3
C
0.2
= 1 A
Figure 8. Collector−Emitter Saturation
Figure 6. Collector Saturation Region
0.1
0.5
0.5
T
J
1
= 25°C
I
V
0.7
C
Figure 10. Capacitance
R
, COLLECTOR CURRENT (AMP)
I
2
, REVERSE VOLTAGE (VOLTS)
C
I
3 A
0.2
B
/I
, BASE CURRENT (AMP)
B
C
5
ib
1
= 3
0.3
10
Voltage
20
2
0.5
5 A
C
ob
50
3
0.7
100
8 A
1
T
25°C
5
J
= 150°C
7
T
200
J
2
10
= 25°C
− 55°C
12 A
3
500
20
5

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