MJE13009_06 ONSEMI [ON Semiconductor], MJE13009_06 Datasheet - Page 6

• Manufacturer Part Number: MJE13009_06
• Description: 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
• Manufacturer: ONSEMI [ON Semiconductor]

INTRODUCTION
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2. (Note 3)
VOLTAGE REQUIREMENTS
important in SWITCHMODE applications.
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than V
line diagrams at I
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (V
and specified use condition. Maximum I
is specified at a relatively low reverse bias (1.5 V) both at
25°C and 100_C. Increasing the reverse bias will give some
improvement in device blocking capability.
switching applications occur during turn−on and turn−off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn−on
and the pulsed forward bias SOA curves (Figure 1) are the
proper design limits.
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 2) which represents voltage−current conditions that
can be sustained during reverse biased turn−off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
shown in relation to the pulsed forward and reverse biased
SOA curves.
diodes shown. In circuits B and C the voltage is clamped by
The primary considerations when selecting a power
Both blocking voltage and sustaining voltage are
Circuits B and C in Table 2 illustrate applications that
The sustaining or active region voltage requirements in
For inductive loads, high voltage and current must be
In the four application examples (Table 2) load lines are
In circuits A and D, inductive reactance is clamped by the
CC
after the device is completely off (see load
C
= I
APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS
leakage
CEV
≈ 0 in Table 2). The blocking
), this is the recommended
CEV
at rated V
http://onsemi.com
CEV
MJE13009
6
the output rectifiers, however, the voltage induced in the
primary leakage inductance is not clamped by these diodes
and could be large enough to destroy the device. A snubber
network or an additional clamp may be required to keep the
turn−off load line within the Reverse Bias SOA curve.
curve during turn−on and within the reverse bias SOA curve
during turn−off are considered safe, with the following
assumptions:
CURRENT REQUIREMENTS
required current level with good fall time, high energy
handling capability and low saturation voltage. On this data
sheet, these parameters have been specified at 8 amperes
which represents typical design conditions for these devices.
The current drive requirements are usually dictated by the
V
voltage is specified at a forced gain condition which must be
duplicated or exceeded in the application to control the
saturation voltage.
SWITCHING REQUIREMENTS
transistor power dissipation occurs during the fall time (t
For this reason considerable effort is usually devoted to
reducing the fall time. The recommended way to accomplish
this is to reverse bias the base−emitter junction during
turn−off. The reverse biased switching characteristics for
inductive loads are discussed in Figure 11 and Table 3 and
resistive loads in Figures 13 and 14. Usually the inductive
load component will be the dominant factor in
SWITCHMODE applications and the inductive switching
data will more closely represent the device performance in
actual application. The inductive switching characteristics
are derived from the same circuit used to specify the reverse
biased SOA curves, (See Table 1) providing correlation
between test procedures and actual use conditions.
3. For detailed information on specific switching applications, see
CE(sat)
Load lines that fall within the pulsed forward biased SOA
An efficient switching transistor must operate at the
In many switching applications, a major portion of the
2. The turn−on time does not exceed 10 ms (see standard
3. The base drive conditions are within the specified
1. The device thermal limitations are not exceeded.
ON Semiconductor Application Notes AN−719, AN−767.
pulsed forward SOA curves in Figure 1).
limits shown on the Reverse Bias SOA curve
(Figure 2).
specification because the maximum saturation
fi
).