BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 10

• Manufacturer Part Number: BFP650_10
• Description: High Linearity Low Noise SiGe:C NPN RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

4
4.1
Table 3
Parameter
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
4.2
Table 4
Parameter
Transition frequency
Collector base capacitance
Collector emitter capacitance
Emitter base capacitance
Data Sheet
Electrical Characteristics
DC Characteristics
DC Characteristics at
General AC Characteristics
General AC Characteristics at
T
A
= 25 °C
Symbol
V
I
I
I
h
Symbol
f
C
C
C
T
CES
CBO
EBO
FE
(BR)CEO
CB
CE
EB
T
A
= 25 °C
Min.
4
–
–
–
–
100
Min.
31
–
–
–
10
41
Typ.
4.5
–
1
1
0.01
170
Typ.
0.26
0.45
1.3
Values
Values
Max.
–
100
40
40
3
250
Max.
–
0.4
–
–
Unit
V
nA
nA
Unit
GHz
pF
pF
pF
A
A
Electrical Characteristics
Note / Test Condition
I
Open base
V
V
Emitter/base shortened
V
Open emitter
V
Open collector
V
Pulse measured
Note / Test Condition
V
f
V
f
Emitter grounded
V
f
Base grounded
V
f
Collector grounded
Revision 1.0, 2010-10-22
C
= 1 GHz
= 1 MHz
= 1 MHz
= 1 MHz
CE
CE
CB
EB
CE
CE
CB
CE
EB
= 3 mA,
= 13 V,
= 5 V,
= 5 V,
= 0.5 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
= 0.5 V,
V
I
I
I
V
V
I
E
C
C
B
V
BE
BE
BE
I
V
= 0
= 70 mA
= 70 mA,
= 0
C
BE
CB
= 0
= 0 V
= 0 V
= 0
BFP650
= 0
= 0 V