BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 19

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BFP650_10

Manufacturer Part Number
BFP650_10
Description
High Linearity Low Noise SiGe:C NPN RF Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Figure 10
Figure 11
Data Sheet
Collector Base Capacitance
Gain
G
ma
,
G
0.6
0.5
0.4
0.3
0.2
0.1
42
39
36
33
30
27
24
21
18
15
12
ms
0
9
6
3
0
0
0
, I
S
21
G
I² =
ms
1
0.5
f
(
f
2
),
|S
G
V
1
C
ma
21
CE
CB
|
3
2
= 3 V,
=
1.5
f
(
V
4
I
CB
C
19
V
f [GHz]
= 70 mA
),
CB
f
2
5
= 1 MHz
[V]
6
2.5
7
3
8
3.5
9
Electrical Characteristics
Revision 1.0, 2010-10-22
10
4
BFP650

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