BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 7

• Manufacturer Part Number: BFP650_10
• Description: High Linearity Low Noise SiGe:C NPN RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

High Linearity Low Noise SiGe:C NPN RF Transistor
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Application Examples
Driver amplifier
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Transmitter driver amplifier
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Output stage LNA for active antennas
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Suitable for 5 - 10.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP650
Data Sheet
Highly linear low noise driver amplifier for all RF frontends
up to 4.5 GHz
Output compression point
at 70 mA, 3V, 2.4 GHz, 50 system
Output 3rd order intermodulation point
at 70 mA, 3 V, 2.4 GHz, 50
Maximum available gain
Minimum noise figure
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible
leads
Qualified according AEC Q101
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
TV, GPS, SDARS
2.4 / 5 GHz WLAN
2.4 / 3.5 / 5 GHz WiMAX, etc
Features
SOT343
NF
G
min
OP
ma
= 1 dB at 30 mA, 3V, 2.4 GHz
1 = B
= 17.5 dB at 70 mA, 3V, 2.4 GHz
1dB
system
= 17 dBm
OIP
3
= 30 dBm
2 = E
Pin Configuration
7
3 = C
4
4 = E
3
Revision 1.0, 2010-10-22
Marking
R5s
1
2
BFP650