BFP650_10 INFINEON [Infineon Technologies AG], BFP650_10 Datasheet - Page 8

• Manufacturer Part Number: BFP650_10
• Description: High Linearity Low Noise SiGe:C NPN RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

2
Table 1
Parameter
Collector emitter voltage
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
1) T
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
S
is the soldering point temperature. T
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings at
1)
Symbol
V
V
V
V
I
I
P
T
T
C
B
T
J
Stg
CEO
CES
CBO
EBO
tot
A
= 25°C (unless otherwise specified)
S
measured on the emitter lead at the soldering point of the pcb.
Min.
–
–
–
–
–
–
–
–
–
-65
8
Values
150
Max.
4.0
3.7
13
13
1.2
150
10
500
150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
Note / Test Condition
Open base
T
T
Emitter / base shortened
Open emitter
Open collector
–
–
T
–
–
Revision 1.0, 2010-10-22
A
A
S
= 25 °C
= -55 °C
80 °C
Maximum Ratings
BFP650