PN4393_TO-92 MICROSS [Micross Components], PN4393_TO-92 Datasheet

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PN4393_TO-92

Manufacturer Part Number
PN4393_TO-92
Description
Single N-Channel JFET switch
Manufacturer
MICROSS [Micross Components]
Datasheet
PN4393 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
PN4393 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
PN4393 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired 
             2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% 
PN4393 SWITCHING CIRCUIT PARAMETERS                                                                                                                                         SWITCHING CIRCUIT 
Available Packages:
PN4393 in TO-92
PN4393 in bare die.
Contact Micross for full package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
The PN4393 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
PN4393 Benefits:
PN4393 Applications:
SYMBOL 
SYMBOL 
SYMBOL 
V
V
V
V
r
BV
r
V
V
I
t
t
I
DS(on)
ds(on)
GS(off)
DS(on)
DS(on)
DS(on)
I
I
D(off)
C
C
C
D(on)
C
d(on)
d(off)
g
GS(F)
g
e
GS(L)
DSS
GSS
R
I
t
t
G
iss
rss
rss
rss
os
GSS
 
 
fs
r
f
 
 
 
 
 
n
L
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
Analog Switches
Choppers, Sample-and-Hold
Normally “On” Switches, Current Limiters
Click To Buy
Linear Systems replaces discontinued Siliconix PN4393
Drain to Source Saturation Current
Gate to Source Breakdown Voltage 
Gate to Source Forward Voltage 
Equivalent Input Noise Voltage 
Drain to Source On Resistance 
Drain to Source On Resistance 
Gate to Source Cutoff Voltage 
Reverse Transfer Capacitance 
3200Ω 
Forward Transconductance 
Drain to Source On Voltage 
Drain to Source On Voltage 
Drain to Source On Voltage 
3mA 
‐5V 
Gate Operating Current 
Gate Reverse Current 
 
 
 
 
 
Output Conductance 
Drain Cutoff Current 
Input Capacitance 
CHARACTERISTIC 
CHARACTERISTIC 
CHARACTERISTIC 
Turn Off Time 
Turn On Time 
 
 
 
 
 
 
 
 
 
 
 
 
TO-92 (Bottom View)
Single N-Channel JFET switch
2
 
MIN 
‐0.5 
‐40 
TYP 
TYP 
3.5 
3.4 
3.0 
25 
12 
13 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
PN4393
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX PN4393 
LOW ON RESISTANCE 
LOW GATE OPERATING CURRENT 
FAST SWITCHING 
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage /  Gate to Source Voltage 
TYP. 
0.25 
0.35 
MIN 
MIN 
0.7 
0.3 
‐5 
‐5 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
http://www.micross.com/distribution
chipcomponents@micross.com
‐1000 
MAX 
MAX 
MAX 
100 
100 
100 
0.4 
60 
16 
15 
50 
30 
‐3 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
nV/√Hz 
UNITS 
UNITS 
UNITS 
mA 
pA 
mS 
µS 
pF 
ns 
Ω 
Ω 
 
 
 
 
 
 
 
 
 
 
1
 @ 25°C (unless otherwise noted) 
                   I
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
V
 = 0V,   V
 = 20V,   V
 = 10V,  I
GS
 = 0V,   V
 = 0V,   V
 = 20V,  I
 = 20V,  I
V
V
V
V
V
V
V
 = 0V,  I
DD
I
V
V
V
V
V
DS 
DG 
GS 
DS 
DS 
GS 
GS 
GS 
GS 
DS
DS
 = 10V,   V
= ‐1µA,   V
=  1mA,   V
= 20V,   V
= 15V,  I
= 0V,   I
= 20V,   V
= 20V,   V
CONDITIONS 
= ‐20V,  V
CONDITIONS 
CONDITIONS 
 = 20V, I
 = 20V, V
= 0V,   I
= 0V,   I
= 0V,   I
GS
D
GS
GS
D
D
D
 = 10mA,  f = 1kHz 
GS
 = ‐12V,  f = 1MHz 
 = 1mA,  f = 1kHz 
 = 1mA,  f = 1kHz 
 = 0A,  f = 1kHz 
 = ‐5V,  f = 1MHz 
 = ‐7V,  f = 1MHz 
‐65°C to +200°C 
‐55°C to +200°C 
 = 0V,  f = 1MHz 
 
 
r
t
D
DS(on) 
I
(ON)
D
D
D
D
I
 = 12mA 
D(off) 
D
GS 
G
 = 10mA 
GS(H)
 = 3mA 
 = 6mA 
 = 1mA 
350mW 
GS 
DS
GS 
GS 
 = 1nA 
DS
 = 50mA 
DS
‐40V 
= ‐12V 
 ≤= 15ns 
 = 0V 
= 0V 
 = 0V 
= ‐5V 
= ‐7V 
 = 0V 
≤ 100Ω 
 = 0V 
= 5pA 

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