FDD8896_12 FAIRCHILD [Fairchild Semiconductor], FDD8896_12 Datasheet

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FDD8896_12

Manufacturer Part Number
FDD8896_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2012 Fairchild Semiconductor Corporation
FDD8896_F085 Rev. C2
FDD8896_F085
N-Channel PowerTrench
30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
θJC
θJA
θJA
Symbol
, T
STG
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
G
S
amb
C
C
= 25
= 25
(TO-252)
o
D-PAK
C
TO-252
= 25
o
o
C, V
C, V
o
C, V
®
GS
GS
MOSFET
GS
D
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
= 25°C unless otherwise noted
θJA
1
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
r
DS(ON)
DS(ON)
DS(ON)
o
2
C/W)
copper pad area
= 5.7mΩ , V
= 6.8mΩ , V
GS
GS
= 10V, I
= 4.5V, I
G
-55 to 175
Ratings
Figure 4
D
D
D
S
0.53
1.88
= 35A
168
100
±20
= 35A
30
94
85
17
80
52
January 2012
www.fairchildsemi.com
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
A
V
A
A
A
C
o
C

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FDD8896_12 Summary of contents

Page 1

FDD8896_F085 N-Channel PowerTrench 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low ...

Page 2

Package Marking and Ordering Information Device Marking Device FDD8896 FDD8896_F085 Electrical Characteristics Symbol Parameter Off Characteristics Drain to Source Breakdown Voltage B VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V ...

Page 3

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE ( C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 ...

Page 4

Typical Characteristics 1000 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) 1 SINGLE PULSE T = MAX RATED 0 DRAIN TO SOURCE VOLTAGE (V) DS ...

Page 5

Typical Characteristics 1.2 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 5000 1000 = C C RSS 0V 1MHz GS ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit V GS ...

Page 7

Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, T thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, P application. Therefore the o temperature C), and thermal resistance R A ...

Page 8

PSPICE Electrical Model .SUBCKT FDD8896 rev July 2003 2.3e 2.3e-9 Cin 6 8 2.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak ...

Page 9

SABER Electrical Model rev July 2003 template FDD8896 n2,n1,n3 =m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=5e-12,ikf=10,nl=1.01,rs=2.6e-3,trs1=8e-4,trs2=2e-7,cjo=8.8e-10,m=0.57,tt=1e-16,xti=0.9) dp..model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=9.4e-10,isl=10e-30,nl=10,m=0.4) m..model mmedmod = (type=_n,vto=1.85,kp=10,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.34,kp=350,is=1e-30, tox=1) ...

Page 10

PSPICE Thermal Model REV 23 July 2003 FDD8896T CTHERM1 TH 6 9e-4 CTHERM2 6 5 1e-3 CTHERM3 5 4 2e-3 CTHERM4 4 3 3e-3 CTHERM5 3 2 7e-3 CTHERM6 2 TL 8e-2 RTHERM1 TH 6 3.0e-2 RTHERM2 6 5 1.0e-1 ...

Page 11

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ AccuPower™ FRFET AX-CAP™* Global Power Resource ...

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