IRFR/U220A FAIRCHILD [Fairchild Semiconductor], IRFR/U220A Datasheet
IRFR/U220A
Manufacturer Part Number
IRFR/U220A
Description
Advanced Power MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.IRFRU220A.pdf
(7 pages)
©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10 A (Max.) @ V
Low R
J
dv/dt
R
R
V
R
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
: 0.626
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25 )
=25 )
C
C
=25
=100
*
o
o
C
C
DS
o
C
o
*
C
= 200V
)
)
O
O
O
O
O
2
1
1
1
3
Typ.
--
--
--
- 55 to +150
IRFR/U220A
0.32
Value
200
+ _
300
4.6
2.9
4.6
5.0
2.5
18
71
40
1
BV
R
I
4
1. Gate 2. Drain 3. Source
D
30
3
D-PAK
DS(on)
= 4.6 A
DSS
Max.
3.14
110
50
= 0.8
2
= 200 V
1
2
3
I-PAK
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
W
V
A
A
V
A
C
o
C
Rev. B
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